欢迎访问ic37.com |
会员登录 免费注册
发布采购

VG37648041AT 参数 Datasheet PDF下载

VG37648041AT图片预览
型号: VG37648041AT
PDF下载: 下载PDF文件 查看货源
内容描述: 256M : X4,X8 , X16 CMOS同步动态RAM [256M:x4, x8, x16 CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 86 页 / 964 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
 浏览型号VG37648041AT的Datasheet PDF文件第5页浏览型号VG37648041AT的Datasheet PDF文件第6页浏览型号VG37648041AT的Datasheet PDF文件第7页浏览型号VG37648041AT的Datasheet PDF文件第8页浏览型号VG37648041AT的Datasheet PDF文件第10页浏览型号VG37648041AT的Datasheet PDF文件第11页浏览型号VG37648041AT的Datasheet PDF文件第12页浏览型号VG37648041AT的Datasheet PDF文件第13页  
Preliminary  
VG37648041AT  
256M:x4, x8, x16  
VIS  
CMOS Synchronous Dynamic RAM  
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a LOAD  
MODE REGISTER command for the base Mode Register, with the reset DLL bit deactivated (i.e.  
to program operating parameters without resetting the DLL) must be performed. Following these  
cycles, the DDR SDRAM is ready for normal operation.  
Register Definition  
Base Mode Register  
The base mode register is used to define the specific mode of operation of the DDR SDRAM.  
This definition includes the selection of a burst length, a burst type, a CAS latency, and an operat-  
ing mode, as shown in Figure 1. The base mode register is programmed via the LOAD MODE  
REGISTER command (with BA0=0 and BA1=0) and will retain the stored information unitil it is  
programmed again or the device loses power.  
Base mode register bits M0-M2 specify the burst length, M3 specifies the type of burst  
(sequential or interleaved), M4-M6 specify the CAS latency, and M7-M11 specify the operating  
mode.  
The base mode register must be loaded when all banks are idle, and the controller must wait  
the specified time before initiating the subsequent operation. Violating either of these require-  
ments will result in unspecified operation.  
Burst Length  
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being  
programmable, as shown in Figure 1. the burst length determines the maximum number of col-  
umn locations that can be accessed for a given READ or WRITE command. Burst lengths of 2, 4,  
or 8 locations are available for both the sequential and the interleaved burst types.  
Reserved states should not be used, as unknown operation or incompatibility with future  
versions may result.  
When a READ or WRITE command is issued, a block of columns equal to the burst length is  
effectively selected. All accesses for that burst take place within this block, meaning that the burst  
will wrap within the block if a boundary is reached. The block is uniquely selected by A1-Ai when  
the burst length is set to two, by A2-Ai when the burst length is set to four and by A3-Ai when the  
burst length is set to eight (where Ai is the most significant column address bit for a given configu-  
ration). The remaining (least significant) address bit(s) is (are) used to select the starting location  
within the block. The programmed burst length applies to both READ and WRITE bursts.  
Document : 1G5-0157  
Rev.1  
Page9  
 复制成功!