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VG3617161ET-8 参数 Datasheet PDF下载

VG3617161ET-8图片预览
型号: VG3617161ET-8
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 69 页 / 1125 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VG3617161ET  
1,048,576 x 16 - Bit  
CMOS Synchronous Dynamic RAM  
VIS  
8.2 WRITE with AUTO PRECHARGE  
During a WRITA cycle, the AUTO PRECHARGE starts at tDPL(min.) after the last data word input to  
the device  
WRITE with AUTO PRECHRGE  
Burst lengh=4  
T0  
T1  
T3  
T6  
T8  
T2  
T4  
T5  
T7  
CLK  
Command  
WRITA B  
AUTO PRECHARGE starts  
tDPL  
CAS latency=2  
DQ  
Hi-Z_  
DB0  
DB1  
DB2  
DB3  
Command  
WRITA B  
AUTO PRECHARGE starts  
tDPL  
CAS latency=3  
DQ  
Hi-Z_  
DB0  
DB1  
DB2  
DB3  
Remark WRITA means WRITE with AUTO PRECHARGE  
In summary, the auto precharge cycle begins relative to a reference clock that indicates the last data word is  
valid.  
In the table below, minus means clocks before the reference; plus means clocks after the reference.  
CAS latency  
2
READ  
-1  
WRITE  
+tDPL(min.)  
3
-2  
+tDPL(min)  
Document:1G5-0189  
Rev.1  
Page20  
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