128Mb Synchronous DRAM
P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT)
P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT)
P2V28S40ATP-7,-75,-8 (4-BANK x 2,097,152-WORD x 16-BIT)
[Read with Auto-Precharge Interrupted by Read to another Bank]
Burst write with auto-precharge can be interrupted by write or read to another bank. Next ACT command can be issued after
tRP. Auto-prechargeinterruptionbyacommandtothesamebankisinhibited.
Read Interrupted by Read to another bank (CL=2,BL=4)
CLK
Command
A0-9,11
A10
Read
Ya
1
Read
BL
ACT
Xa
tRP
Yb
0
Xa
BA0-1
DQ
00
10
00
Qa0
Qa1
Qb0
Qb1
Qb2
activate
Qb3
auto-precharge
interrupted
[Full Page Burst]
Full page burst length is available for only the sequential burst type. Full page burst read or write is repeated untill a Precharge
oraBurstTerminatecommandisissued. Incaseofthefullpageburst, areadorwritewithauto-prechargecommandisillegal.
[Single Write]
When single write mode is set, burst length for write is always one, independently of Burst Length defined by (A2-0).
JULY.2000
Rev.2.2
Page-26
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
