128Mb Synchronous DRAM
P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT)
P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT)
P2V28S40ATP-7,-75,-8 (4-BANK x 2,097,152-WORD x 16-BIT)
[Write with Auto-Precharge Interrupted by Write or Read to another Bank]
Burst write with auto-precharge can be interrupted by write or read to another bank. Next ACT command can be issued after
tRP. Auto-prechargeinterruptionbyacommandtothesamebankisinhibited.
Write Interrupted by WRITE to another bank (BL=4)
CLK
ACT
Xa
Command
A0-9,11
A10
Write
Ya
Write
BL
tRP
Yb
tWR
Xa
1
0
00
BA0-1
DQ
00
10
Da 0
Da 1
Db0
Db1
Db2
Db3
auto-precharge
interrupted
activate
Write Interrupted by READ to another bank (CL=2,BL=4)
CLK
ACT
Xa
Command
Write
Ya
Read
BL
tRP
A0-9,11
A10
Yb
tWR
Xa
1
0
00
BA0-1
DQ
00
10
Da 0
Da 1
Qb0
Qb1
Qb2
Qb3
activate
auto-precharge
interrupted
JULY.2000
Rev.2.2
Page-25
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
