10-FU094PB017ME02-L620F36
datasheet
H-Bridge Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
200
200
VGS
:
5 V
6 V
7 V
8 V
150
100
50
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
0
-50
-100
-150
-200
0
0
1
2
3
4
5
6
7
8
9
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
125 °C
150 °C
VGS
Tj =
Tj:
VGS from 5 V to 15 V in steps of 1 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
80
10
70
60
50
40
30
20
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-4
10
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,94
25 °C
125 °C
150 °C
VDS
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
4,21E-02
1,28E-01
5,28E-01
1,69E-01
7,30E-02
2,99E+00
4,21E-01
7,51E-02
9,86E-03
1,37E-03
Copyright Vincotech
6
03 Aug. 2021 / Revision 1
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