10-FU094PB017ME02-L620F36
datasheet
H-Bridge Switching Characteristics
figure 8.
MOSFET
figure 9.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of gate resistor
E = f(ID)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-5/15
2
V
V
Ω
Ω
125 °C
150 °C
600
-5/15
60
V
V
A
125 °C
150 °C
Tj:
Tj:
VGS
Rgon
Rgoff
2
figure 10.
MOSFET
figure 11.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(ID)
Erec = f(Rg)
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
ID(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
=
=
=
VDS
VGS
ID
=
=
=
600
-5/15
2
V
V
Ω
125 °C
150 °C
600
-5/15
60
V
V
A
125 °C
150 °C
Tj:
Tj:
VGS
Rgon
Copyright Vincotech
9
03 Aug. 2021 / Revision 1
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