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TPS51211DSCR 参数 Datasheet PDF下载

TPS51211DSCR图片预览
型号: TPS51211DSCR
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能的单同步降压型控制器,用于笔记本电源 [HIGH PERFORMANCE, SINGLE SYNCHRONOUS STEP-DOWN CONTROLLER FOR NOTEBOOK POWER SUPPLY]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管
文件页数/大小: 26 页 / 676 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TPS51211  
www.ti.com  
SLUSAA7 NOVEMBER 2010  
POWER-GOOD  
The TPS51211 has powergood output that indicates high when switcher output is within the target. The  
powergood function is activated after soft-start has finished. If the output voltage becomes within +10%/–5% of  
the target value, internal comparators detect power-good state and the power-good signal becomes high after a  
1-ms internal delay. If the output voltage goes outside of +15%/–10% of the target value, the powergood signal  
becomes low after a 2-ms internal delay. The powergood output is an open-drain output and must be pulled up  
externally.  
CURRENT SENSE AND OVER CURRENT PROTECTION  
TPS51211 has cycle-by-cycle overcurrent limiting control. The inductor current is monitored during the OFF state  
and the controller keeps the OFF state during the inductor current is larger than the overcurrent trip level. To  
provide both good accuracy and cost effective solution, the TPS51211 supports temperature compensated  
MOSFET RDS(on) sensing. The TRIP pin should be connected to GND through the trip voltage setting resistor,  
RTRIP. The TRIP terminal sources ITRIP current, which is 10mA typically at room temperature, and the trip level is  
set to the OCL trip voltage VTRIP as shown in Equation 4. Note that VTRIP is limited up to approximately 3 V  
internally.  
V
(mV) = R  
(kW)´I  
(mA)  
TRIP  
TRIP  
TRIP  
(4)  
The inductor current is monitored by the voltage between GND pad and SW pin so that the SW pin should be  
connected to the drain terminal of the low-side MOSFET properly. ITRIP has 4700ppm/°C temperature slope to  
compensate the temperature dependency of the RDS(on). GND is used as the positive current sensing node so  
that GND should be connected to the proper current sensing device, i.e. the source terminal of the low-side  
MOSFET.  
As the comparison is done during the OFF state, VTRIP sets valley level of the inductor current. Thus, the load  
current at overcurrent threshold, IOCP, can be calculated in Equation 5  
I
æ
ö
IND ripple  
(
(V - V  
)´ V  
V
V
TRIP  
)
1
TRIP  
IN  
OUT OUT  
I
= ç  
ç
è
÷ +  
÷
ø
=
+
´
OCP  
8´R  
2
8´R  
2´L ´ f  
V
DS(on)  
DS(on)  
SW  
IN  
(5)  
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output  
voltage tends to fall down. Eventually, it crosses the undervoltage protection threshold and shuts down the  
controller.  
OVER/UNDER VOLTAGE PROTECTION  
TPS51211 monitors a resistor divided feedback voltage to detect over and undervoltage. When the feedback  
voltage becomes higher than 120% of the target voltage, the OVP comparator output goes high and the circuit  
latches as the high-side MOSFET driver OFF and the low-side MOSFET driver ON.  
When the feedback voltage becomes lower than 70% of the target voltage, the UVP comparator output goes  
high and an internal UVP delay counter begins counting. After a 1-ms delay, TPS51211 latches OFF both  
high-side and low-side MOSFETs drivers. This function is enabled after 1.2 ms following EN has become high.  
UVLO PROTECTION  
TPS51211 has V5IN undervoltage lockout protection (UVLO). When the V5IN voltage is lower than UVLO  
threshold voltage, the switch mode power supply shuts off. This is non-latch protection.  
THERMAL SHUTDOWN  
TPS51211 monitors the die temperature. If the temperature exceeds the threshold value (typically 145°C), the  
TPS51211 is shut off. This is non-latch protection.  
Copyright © 2010, Texas Instruments Incorporated  
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