欢迎访问ic37.com |
会员登录 免费注册
发布采购

TPS51216 参数 Datasheet PDF下载

TPS51216图片预览
型号: TPS51216
PDF下载: 下载PDF文件 查看货源
内容描述: 完整的DDR2, DDR3和DDR3L存储器功率解决方案同步降压控制器, 2 -A LDO ,缓冲基准 [Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck Controller, 2-A LDO, Buffered Reference]
分类和应用: 存储双倍数据速率控制器
文件页数/大小: 30 页 / 769 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号TPS51216的Datasheet PDF文件第15页浏览型号TPS51216的Datasheet PDF文件第16页浏览型号TPS51216的Datasheet PDF文件第17页浏览型号TPS51216的Datasheet PDF文件第18页浏览型号TPS51216的Datasheet PDF文件第20页浏览型号TPS51216的Datasheet PDF文件第21页浏览型号TPS51216的Datasheet PDF文件第22页浏览型号TPS51216的Datasheet PDF文件第23页  
TPS51216  
www.ti.com  
SLUSAB9 NOVEMBER 2010  
VDDQ Overvoltage and Undervoltage Protection  
TPS51216 sets the overvoltage protection (OVP) when the VDDQSNS voltage reaches a level 20% (typ) higher  
than the REFIN voltage. When an OV event is detected, the controller latches DRVH low and DRVL high.  
VTTREF and VTT are turned off and discharged using the non-tracking discharge MOSFETs regardless of the  
tracking mode.  
The undervoltage protection (UVP) latch is set when the VDDQSNS voltage remains lower than 68% (typ) of the  
REFIN voltage for 1 ms or longer. In this fault condition, the controller latches DRVH low and DRVL low and  
discharges the VDDQ, VTT and VTTREF outputs. UVP detection function is enabled after 1.2 ms of SMPS  
operation to ensure startup.  
To release the OVP and UVP latches, toggle S5 or adjust the V5IN voltage down and up beyond the  
undervoltage lockout threshold.  
VDDQ Overcurrent Protection  
The VDDQ SMPS has cycle-by-cycle overcurrent limiting protection. The inductor current is monitored during the  
off-state using the low-side MOSFET RDS(on) and the controller maintains the off-state while the voltage across  
the low-side MOSFET is larger than the overcurrent trip level. The current monitor circuit inputs are PGND and  
SW pins so that those should be properly connected to the source and drain terminals of low-side MOSFET. The  
overcurrent trip level, VTRIP, is determined by Equation 4, where RTRIP is the value of the resistor connected  
between the TRIP pin and GND, and ITRIP is the current sourced from the TRIP pin. ITRIP is 10 mA typically at  
room temperature, and has 4700ppm/°C temperature coefficient to compensate the temperature dependency of  
the low-side MOSFET RDS(on)  
.
V
= R ´I  
TRIP  
TRIP TRIP  
(4)  
Because the comparison is done during the off-state, VTRIP sets the valley level of the inductor current. The load  
current OCL level, IOCL, can be calculated by considering the inductor ripple current as shown in Equation 5  
æ
ç
ö
÷
æ
ç
ö
÷
I
IND ripple  
(
V
IN - VOUT  
VOUT  
VTRIP  
VTRIP  
)
1
2
IOCL  
=
+
=
+
´
´
ç
è
÷
ø
ç
è
÷
ø
8´RDS on  
2
8´RDS on  
LX  
fSW ´ V  
IN  
( )  
( )  
where  
IIND(ripple) is inductor ripple current  
(5)  
In an overcurrent condition, the current to the load exceeds the current to the output capacitor, thus the output  
voltage tends to fall down. Eventually, it crosses the undervoltage protection threshold and shuts down.  
VTT Overcurrent Protection  
The LDO has an internally fixed constant overcurrent limiting of 3-A (typ) for both sink and source operation.  
V5IN Undervoltage Lockout Protection  
TPS51216 has a 5-V supply undervoltage lockout protection (UVLO) threshold. When the V5IN voltage is lower  
than UVLO threshold voltage, typically 3.93 V, VDDQ, VTT and VTTREF are shut off. This is a non-latch  
protection.  
Thermal Shutdown  
TPS51216 includes an internal temperature monitor. If the temperature exceeds the threshold value, 140°C (typ),  
VDDQ, VTT and VTTREF are shut off. The thermal shutdown state of VDDQ is open, VTT and VTTREF are high  
impedance (high-Z) respectively, and the discharge functions are disabled. This is a non-latch protection and the  
operation is restarted with soft-start sequence when the device temperature is reduced by 10°C (typ).  
Copyright © 2010, Texas Instruments Incorporated  
Submit Documentation Feedback  
19  
Product Folder Link(s) :TPS51216  
 
 
 复制成功!