TPS51216
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SLUSAB9 –NOVEMBER 2010
TPS51216 Application Circuit
V5IN
4.5 V to 5.5 V
R2 200 kW
R3 36 kW
R1
100 kW
S5
S3
AGND
C12
10 mF
V
IN
8 V to 20
21
20
19
18
17
16
C7
0.1 mF
C8
10 mF
C9
10 mF
C10
10 mF
C5
0.1 mF
R6
0 W
PGND
VTT
VBST 15
DRVH 14
SW 13
1
2
3
VTTSNS
VLDOIN
VTT
0.75 V/2 A
R7 0 W
PGND
L1
0.56 mH
Q1
FDMS8680
C1
10 mF
U1
TPS51216RUK
VDDQ
1.5 V/20
VTTGND
4
5
VTTGND
VTTREF
V5IN 12
DRVL 11
Q2
FDMS8670AS
Q3
FDMS8670AS
PGND
C6
1 mF
C11
330 mF
6
7
8
9
10
VTTREF
0.75 V
VDDQ_G
R4
10 kW
R5
49 kW
PGND AGND
C2 C3
0.22 mF 0.1 mF
C4
10 nF
UDG-10165
Figure 32. DDR3, 400-kHz Application Circuit, Tracking Discharge
Table 3. DDR3, 400-kHz Application Circuit, List of Materials
REFERENCE
DESIGNATOR
QTY
SPECIFICATION
MANUFACTURE
PART NUMBER
C8, C9, C10
3
1
1
1
2
10 µF, 25 V
Taiyo Yuden
Panasonic
Panasonic
Fairchild
TMK325BJ106MM
EEFSX0D331XE
ETQP4LR56WFC
FDMS8680
C11
L1
330 µF, 2V, 6 mΩ
0.56 µH, 21 A, 1.56 mΩ
30 V, 35 A, 8.5 mΩ
30 V, 42 A, 3.5 mΩ
Q1
Q2, Q3
Fairchild
FDMS8670AS
For this example, the bulk output capacitor ESR requirement for D-CAP™ mode is described in Equation 12,
whichever is greater.
20mV ´ f
´L
3
SW
ESR ³
or ESR ³
V
2p´ f
´ C
OUT
SW OUT
(12)
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