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TM4SN64EPU-12A 参数 Datasheet PDF下载

TM4SN64EPU-12A图片预览
型号: TM4SN64EPU-12A
PDF下载: 下载PDF文件 查看货源
内容描述: 同步动态RAM模块 [SYNCHRONOUS DYNAMIC RAM MODULES]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 16 页 / 273 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TM2SN64EPU 2097152 BY 64-BIT  
TM4SN64EPU 4194304 BY 64-BIT  
SYNCHRONOUS DYNAMIC RAM MODULES  
SMMS681 – AUGUST 1997  
electrical characteristics over recommended ranges of supply voltage and ambient temperature  
(unless otherwise noted) (see Note 3)  
TM2SN64EPU  
’2SN64EPU-12A ’2SN64EPU-12  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN  
MAX  
MIN  
MAX  
V
V
High-level output voltage  
Low-level output voltage  
I
I
= – 2 mA  
= 2 mA  
2.4  
2.4  
V
V
OH  
OH  
0.4  
10  
0.4  
10  
OL  
OL  
0 V < V < V  
All other pins = 0 V to V  
+ 0.3 V,  
I
DD  
I
I
Input current (leakage)  
Output current (leakage)  
µA  
DD  
+0.3 V,  
DD  
0 V < V < V  
Output disabled  
O
I
O
10  
680  
760  
10  
600  
760  
µA  
mA  
mA  
Burst length = 1,  
CAS latency = 2  
CAS latency = 3  
t
t MIN  
RC RC  
I
Operating current  
CC1  
I
/I = 0 mA, one bank  
OH OL  
activated (see Note 4)  
I
I
I
CKE V MAX, t = 15 ns (see Note 5)  
CK  
16  
16  
16  
16  
mA  
mA  
mA  
CC2P  
CC2PS  
CC2N  
Precharge standby current in  
power-down mode  
IL  
CKE and CK V MAX, t  
= (see Note 6)  
IL  
CK  
= 15 ns (see Note 5)  
CK  
CKE V MIN, t  
240  
240  
IH  
Precharge standby current in  
non-power-down mode  
CKE V MIN, CK V MAX, t  
(see Note 6)  
= ∞  
IH  
IL  
CK  
I
16  
16  
mA  
CC2NS  
I
I
I
CKE V MAX, t  
IL  
= 15 ns (see Note 5)  
64  
64  
64  
64  
mA  
mA  
mA  
CC3P  
CC3PS  
CC3N  
Active standby current in  
power-down mode  
CK  
CKE and CK V MAX, t  
= (see Note 6)  
CK  
= 15 ns (see Note 5)  
IL  
CKE V MIN, t  
IH  
280  
280  
CK  
Active standby current in  
non-power-down mode  
CKE V MIN, CK V MAX, t  
= ∞  
IH  
IL  
CK  
I
80  
1040  
1240  
80  
880  
mA  
mA  
mA  
CC3NS  
(see Note 6)  
Page burst, I  
/I  
= 0 mA  
OH OL  
CAS latency = 2  
CAS latency = 3  
All banks activated,  
= one cycle  
I
Burst current  
CC4  
n
CCD  
(see Note 7)  
1240  
CAS latency = 2  
CAS latency = 3  
600  
680  
16  
560  
680  
16  
mA  
mA  
mA  
I
I
Auto-refresh current  
Self-refresh current  
t
t MIN  
CC5  
RC RC  
CKE V MAX  
IL  
CC6  
NOTES: 3. All specifications apply to the device after power-up initialization. All control and address inputs must be stable and valid.  
4. Control, DQ, and address inputs change state twice during t  
.
RC  
5. Control, DQ, and address inputs change state once every 30 ns.  
6. Control, DQ, and address inputs do not change.  
7. Control, DQ, and address inputs change once every cycle.  
7
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  
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