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AM3352BZCZD80 参数 Datasheet PDF下载

AM3352BZCZD80图片预览
型号: AM3352BZCZD80
PDF下载: 下载PDF文件 查看货源
内容描述: 的Sitara AM335x ARM Cortex-A8的微处理器(MPU ) [Sitara AM335x ARM Cortex-A8 Microprocessors (MPUs)]
分类和应用: 微控制器和处理器外围集成电路微处理器时钟
文件页数/大小: 236 页 / 2887 K
品牌: TI [ TEXAS INSTRUMENTS ]
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AM3359, AM3358, AM3357  
AM3356, AM3354, AM3352  
www.ti.com  
SPRS717F OCTOBER 2011REVISED APRIL 2013  
5.6.2.3.3.5 DDR3 Keepout Region  
The region of the PCB used for DDR3 circuitry must be isolated from other signals. The DDR3 keepout  
region is defined for this purpose and is shown in Figure 5-51. This region should encompass all DDR3  
circuitry and the region size varies with component placement and DDR3 routing. Additional clearances  
required for the keepout region are shown in Table 5-61. Non-DDR3 signals should not be routed on the  
same signal layer as DDR3 signals within the DDR3 keepout region. Non-DDR3 signals may be routed in  
the region provided they are routed on layers separated from DDR3 signal layers by a ground layer. No  
breaks should be allowed in the reference ground or VDDS_DDR power plane in this region. In addition,  
the VDDS_DDR power plane should cover the entire keepout region.  
DDR3 Interface  
DDR3 Keepout Region  
Encompasses Entire  
DDR3 Routing Area  
Figure 5-51. DDR3 Keepout Region  
5.6.2.3.3.6 Bulk Bypass Capacitors  
Bulk bypass capacitors are required for moderate speed bypassing of the DDR3 and other circuitry.  
Table 5-62 contains the minimum numbers and capacitance required for the bulk bypass capacitors. Note  
that this table only covers the bypass needs of the AM335x DDR3 interface and DDR3 devices. Additional  
bulk bypass capacitance may be needed for other circuitry.  
Table 5-62. Bulk Bypass Capacitors(1)  
NO.  
1
PARAMETER  
AM335x VDDS_DDR bulk bypass capacitor count  
AM335x VDDS_DDR bulk bypass total capacitance  
DDR3#1 bulk bypass capacitor count  
MIN  
2
MAX  
UNIT  
Devices  
μF  
2
20  
2
3
Devices  
μF  
4
DDR3#1 bulk bypass total capacitance  
DDR3#2 bulk bypass capacitor count(2)  
DDR3#2 bulk bypass total capacitance(2)  
20  
2
5
Devices  
μF  
6
20  
(1) These devices should be placed near the devices they are bypassing, but preference should be given to the placement of the high-  
speed (HS) bypass capacitors and DDR3 signal routing.  
(2) Only used when two DDR3 devices are used.  
Copyright © 2011–2013, Texas Instruments Incorporated  
Peripheral Information and Timings  
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