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AM3352BZCZD80 参数 Datasheet PDF下载

AM3352BZCZD80图片预览
型号: AM3352BZCZD80
PDF下载: 下载PDF文件 查看货源
内容描述: 的Sitara AM335x ARM Cortex-A8的微处理器(MPU ) [Sitara AM335x ARM Cortex-A8 Microprocessors (MPUs)]
分类和应用: 微控制器和处理器外围集成电路微处理器时钟
文件页数/大小: 236 页 / 2887 K
品牌: TI [ TEXAS INSTRUMENTS ]
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AM3359, AM3358, AM3357  
AM3356, AM3354, AM3352  
www.ti.com  
SPRS717F OCTOBER 2011REVISED APRIL 2013  
5.6.2.1.2.5 LPDDR Keepout Region  
The region of the PCB used for the LPDDR circuitry must be isolated from other signals. The LPDDR  
keepout region is defined for this purpose and is shown in Figure 5-35. This region should encompass all  
LPDDR circuitry and the region size varies with component placement and LPDDR routing. Additional  
clearances required for the keepout region are shown in Table 5-35. Non-LPDDR signals should not be  
routed on the same signal layer as LPDDR signals within the LPDDR keepout region. Non-LPDDR signals  
may be routed in the region provided they are routed on layers separated from LPDDR signal layers by a  
ground layer. No breaks should be allowed in the reference ground or VDDS_DDR power plane in this  
region. In addition, the VDDS_DDR power plane should cover the entire keepout region.  
A1  
LPDDR  
Device  
A1  
Figure 5-35. LPDDR Keepout Region  
5.6.2.1.2.6 Bulk Bypass Capacitors  
Bulk bypass capacitors are required for moderate speed bypassing of the LPDDR and other circuitry.  
Table 5-36 contains the minimum numbers and capacitance required for the bulk bypass capacitors. Note  
that this table only covers the bypass needs of the AM335x LPDDR interface and LPDDR devices.  
Additional bulk bypass capacitance may be needed for other circuitry.  
Table 5-36. Bulk Bypass Capacitors(1)  
NO.  
1
PARAMETER  
AM335x VDDS_DDR bulk bypass capacitor count  
MIN  
1
MAX  
UNIT  
Devices  
μF  
2
AM335x VDDS_DDR bulk bypass total capacitance  
LPDDR#1 bulk bypass capacitor count  
10  
1
3
Devices  
μF  
4
LPDDR#1 bulk bypass total capacitance  
LPDDR#2 bulk bypass capacitor count(2)  
LPDDR#2 bulk bypass total capacitance(2)  
10  
1
5
Devices  
μF  
6
10  
(1) These devices should be placed near the device they are bypassing, but preference should be given to the placement of the high-speed  
(HS) bypass capacitors.  
(2) Only used when two LPDDR devices are used.  
Copyright © 2011–2013, Texas Instruments Incorporated  
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