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S2008V12V 参数 Datasheet PDF下载

S2008V12V图片预览
型号: S2008V12V
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管产品目录 [Thyristor Product Catalog]
分类和应用:
文件页数/大小: 224 页 / 2673 K
品牌: TECCOR [ TECCOR ELECTRONICS ]
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AN1008  
Application Notes  
IT: Current Rating  
SCR  
SUPPLY FREQUENCY: 60 Hz Sinusoidal  
LOAD: Resistive  
RMS ON-STATE CURRENT [ T(RMS)]:  
Maximum Rated Value at Specified  
Case Temperature  
Notes:  
1000  
400  
1) Gate control may be lost  
during and immediately  
following surge current interval.  
2) Overload may not be repeated  
until junction temperature has  
returned to steady-state  
rated value.  
I
For RMS and average currents, the restricting factor is usually  
confined so that the power dissipated during the on state and as  
a result of the junction-to-case thermal resistance will not pro-  
duce a junction temperature in excess of the maximum junction  
temperature rating. Power dissipation is changed to RMS and  
average current ratings for a 60 Hz sine wave with a 180° con-  
duction angle. The average current for conduction angles less  
than 180° is derated because of the higher RMS current con-  
nected with high peak currents. The DC current rating is higher  
than the average value for 180° conduction since no RMS com-  
ponent is present.  
300  
250  
150  
120  
100  
80  
60  
50  
40  
30  
20  
10  
The dissipation for non-sinusoidal waveshapes can be deter-  
mined in several ways. Graphically plotting instantaneous dissi-  
pation as a function of time is one method. The total maximum  
allowable power dissipation (PD) may be determined using the  
following equation for temperature rise:  
1
10  
100  
1000  
Surge Current Duration – Full Cycles  
Figure AN1008.3  
Peak Surge Current versus Surge Current Duration  
ITM: Peak Repetitive On-state Current — SCR and Triac  
T
T  
C
J(MAX)  
R
P
= -----------------------------------  
The ITM rating specifies the maximum peak current that may be  
applied to the device during brief pulses. When the device oper-  
ates under these circumstances, blocking capability is main-  
tained. The minimum pulse duration and shape are defined and  
control the applied di/dt. The operating voltage, the duty factor,  
the case temperature, and the gate waveform are also defined.  
This rating must be followed when high repetitive peak currents  
are employed, such as in pulse modulators, capacitive-discharge  
circuits, and other applications where snubbers are required.  
D
θJC  
where TJ(max) is the maximum rated junction temperature (at  
zero rated current), TC is the actual operating case temperature,  
and RθJC is the published junction-to-case thermal resistance.  
Transient thermal resistance curves are required for short inter-  
val pulses.  
Triac  
The limiting factor for RMS current is determined by multiplying  
power dissipation by thermal resistance. The resulting current  
value will ensure an operating junction temperature within maxi-  
mum value. For convenience, dissipation is converted to RMS  
current at a 360° conduction angle. The same RMS current can  
be used at a conduction angle of less than 360°. For information  
on non-sinusoidal waveshapes and a discussion of dissipation,  
refer to the preceding description of SCR current rating.  
di/dt: Rate-of-change of On-state Current — SCR and Triac  
The di/dt rating specifies the maximum rate-of-rise of current  
through a thyristor device during turn-on. The value of principal  
voltage prior to turn-on and the magnitude and rise time of the  
gate trigger waveform during turn-on are among the conditions  
under which the rating applies. If the rate-of-change of current  
(di/dt) exceeds this maximum value, or if turn-on with high di/dt  
during minimum gate drive occurs (such as dv/dt or overvoltage  
events), then localized heating may cause device degradation.  
During the first few microseconds of initial turn-on, the effect of  
di/dt is more pronounced. The di/dt capability of the thyristor is  
greatly increased as soon as the total area of the pellet is in full  
conduction.  
The di/dt effects that can occur as a result of voltage or transient  
turn-on (non-gated) is not related to this rating. The di/dt rating is  
specified for maximum junction temperature.  
As shown in Figure AN1008.4, the di/dt of a surge current can be  
calculated by means of the following equation.  
ITSM: Peak Surge (Non-repetitive) On-state  
Current — SCR and Triac  
The peak surge current is the maximum peak current that may be  
applied to the device for one full cycle of conduction without  
device degradation. The maximum peak current is usually speci-  
fied as sinusoidal at 50 Hz or 60 Hz. This rating applies when the  
device is conducting rated current before the surge and, thus,  
with the junction temperature at rated values before the surge.  
The junction temperature will surpass the rated operating tem-  
perature during the surge, and the blocking capacity may be  
decreased until the device reverts to thermal equilibrium.  
The surge-current curve in Figure AN1008.3 illustrates the peak  
current that may be applied as a function of surge duration. This  
surge curve is not intended to depict an exponential current  
decay as a function of applied overload. Instead, the peak current  
shown for a given number of cycles is the maximum peak surge  
permitted for that time period. The current must be derated so  
that the peak junction temperature during the surge overload  
does not exceed maximum rated junction temperature if blocking  
is to be retained after a surge.  
π(I  
)
di  
TM  
t
---- = -----------------  
dt  
As an example, surge current of 400 A at 60 Hz has a di/dt of  
π400/8.3 or 151.4 A/ms.  
http://www.teccor.com  
+1 972-580-7777  
AN1008 - 2  
©2002 Teccor Electronics  
Thyristor Product Catalog  
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