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S2008V12V 参数 Datasheet PDF下载

S2008V12V图片预览
型号: S2008V12V
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管产品目录 [Thyristor Product Catalog]
分类和应用:
文件页数/大小: 224 页 / 2673 K
品牌: TECCOR [ TECCOR ELECTRONICS ]
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AN1008  
8
Explanation of Maximum Ratings and  
Characteristics for Thyristors  
VDRM: Peak Repetitive Forward (Off-state) Voltage  
Introduction  
SCR  
Data sheets for SCRs and triacs give vital information regarding  
maximum ratings and characteristics of thyristors. If the maxi-  
mum ratings of the thyristors are surpassed, possible irrevers-  
ible damage may occur. The characteristics describe various  
pertinent device parameters which are guaranteed as either min-  
imums or maximums. Some of these characteristics relate to the  
ratings but are not ratings in themselves. The characteristic does  
not define what the circuit must provide or be restricted to, but  
defines the device characteristic. For example, a minimum value  
is indicated for the dv/dt because this value depicts the guaran-  
teed worst-case limit for all devices of the specific type. This min-  
imum dv/dt value represents the maximum limit that the circuit  
should allow.  
The peak repetitive forward (off-state) voltage rating (Figure  
AN1008.1) refers to the maximum peak forward voltage which  
may be applied continuously to the main terminals (anode, cath-  
ode) of an SCR. This rating represents the maximum voltage the  
SCR should be required to block in the forward direction. The  
SCR may or may not go into conduction at voltages above the  
V
DRM rating. This rating is specified for an open-gate condition  
and gate resistance termination. A positive gate bias should be  
avoided since it will reduce the forward-voltage blocking capabil-  
ity. The peak repetitive forward (off-state) voltage rating applies  
for case temperatures up to the maximum rated junction temper-  
ature.  
Triac  
Maximum Ratings  
The peak repetitive off-state voltage rating should not be sur-  
passed on a typical, non-transient, working basis. (Figure  
AN1008.2) VDRM should not be exceeded even instantaneously.  
This rating applies for either positive or negative bias on main  
terminal 2 at the rated junction temperature. This voltage is less  
than the minimum breakover voltage so that breakover will not  
occur during operation. Leakage current is controlled at this volt-  
age so that the temperature rise due to leakage power does not  
contribute significantly to the total temperature rise at rated cur-  
rent.  
VRRM: Peak Repetitive Reverse Voltage — SCR  
The peak repetitive reverse voltage rating is the maximum peak  
reverse voltage that may be continuously applied to the main ter-  
minals (anode, cathode) of an SCR. (Figure AN1008.1) An open-  
gate condition and gate resistance termination is designated for  
this rating. An increased reverse leakage can result due to a pos-  
itive gate bias during the reverse voltage exposure time of the  
SCR. The repetitive peak reverse voltage rating relates to case  
temperatures up to the maximum rated junction temperature.  
+I  
+I  
Voltage Drop (V ) at  
T
Specified Current (i )  
T
Voltage Drop (VT) at  
Specified Current (iT)  
Latching Current (I )  
L
Latching Current (IL)  
Off-state Leakage  
Current – (I  
Specified V  
) at  
DRM  
DRM  
Off - State Leakage  
Current - (IDRM) at  
Specified VDRM  
Minimum Holding  
Reverse Leakage  
Current - (IRRM) at  
Specified VRRM  
Current (I  
)
H
Minimum Holding  
Current (IH  
-V  
+V  
)
-V  
+V  
Specified Minimum  
Off-state  
Blocking  
Specified Minimum  
Off - State  
Specified Minimum  
Reverse Blocking  
Blocking  
Voltage (V  
)
DRM  
Voltage (VRRM  
)
Voltage (VDRM  
)
Breakover  
Voltage  
Reverse  
Breakdown  
Voltage  
Forward  
Breakover  
Voltage  
-I  
-I  
Figure AN1008.2  
V-I Characteristics of Triac Device  
Figure AN1008.1  
V-I Characteristics of SCR Device  
©2002 Teccor Electronics  
Thyristor Product Catalog  
AN1008 - 1  
http://www.teccor.com  
+1 972-580-7777  
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