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UPSD3412C-24U6T 参数 Datasheet PDF下载

UPSD3412C-24U6T图片预览
型号: UPSD3412C-24U6T
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存可编程系统设备与8032单片机内核和16Kbit的SRAM [Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM]
分类和应用: 闪存静态存储器微控制器
文件页数/大小: 152 页 / 1492 K
品牌: STMICROELECTRONICS [ ST ]
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UPSD3212C, UPSD3212CV  
MAXIMUM RATING  
Stressing the device above the rating listed in the  
Absolute Maximum Ratings” table may cause per-  
manent damage to the device. These are stress  
ratings only and operation of the device at these or  
any other conditions above those indicated in the  
Operating sections of this specification is not im-  
plied. Exposure to Absolute Maximum Rating con-  
ditions for extended periods may affect device  
reliability. Refer also to the STMicroelectronics  
SURE Program and other relevant quality docu-  
ments.  
Table 85. Absolute Maximum Ratings  
Symbol  
Parameter  
Min.  
Max.  
125  
235  
6.5  
Unit  
°C  
°C  
V
T
Storage Temperature  
–65  
STG  
(1)  
TLEAD  
VIO  
Lead Temperature during Soldering (20 seconds max.)  
Input and Output Voltage (Q = V or Hi-Z)  
–0.5  
–0.5  
OH  
V
CC  
Supply Voltage  
6.5  
V
V
Device Programmer Supply Voltage  
–0.5  
14.0  
2000  
V
PP  
2
VESD  
–2000  
V
Electrostatic Discharge Voltage (Human Body Model)  
Note: 1. IPC/JEDEC J-STD-020A  
2. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 , R2=500 )  
121/152  
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