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UPSD3412C-24U6T 参数 Datasheet PDF下载

UPSD3412C-24U6T图片预览
型号: UPSD3412C-24U6T
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存可编程系统设备与8032单片机内核和16Kbit的SRAM [Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM]
分类和应用: 闪存静态存储器微控制器
文件页数/大小: 152 页 / 1492 K
品牌: STMICROELECTRONICS [ ST ]
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UPSD3212C, UPSD3212CV  
AC/DC PARAMETERS  
These tables describe the AD and DC parameters  
of the uPSD321X Devices:  
– WRITE Timing  
– Power-down and RESET Timing  
DC Electrical Specification  
AC Timing Specification  
The following are issues concerning the parame-  
ters presented:  
– In the DC specification the supply current is giv-  
en for different modes of operation.  
– The AC power component gives the PLD, Flash  
memory, and SRAM mA/MHz specification. Fig-  
ure 62 and Figure 63 show the PLD mA/MHz as  
a function of the number of Product Terms (PT)  
used.  
– In the PLD timing parameters, add the required  
delay when Turbo Bit is '0.'  
PLD Timing  
– Combinatorial Timing  
– Synchronous Clock Mode  
– Asynchronous Clock Mode  
– Input Macrocell Timing  
MCU Module Timing  
– READ Timing  
Figure 62. PLD I /Frequency Consumption (5V range)  
CC  
110  
100  
90  
V
CC  
= 5V  
80  
70  
60  
50  
40  
30  
20  
10  
0
PT 100%  
PT 25%  
0
5
10  
15  
20  
25  
HIGHEST COMPOSITE FREQUENCY AT PLD INPUTS (MHz)  
AI02894  
Figure 63. PLD I /Frequency Consumption (3V range)  
CC  
60  
V
CC  
= 3V  
50  
40  
30  
20  
10  
0
PT 100%  
PT 25%  
0
5
10  
15  
20  
25  
HIGHEST COMPOSITE FREQUENCY AT PLD INPUTS (MHz)  
AI03100  
119/152  
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