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STM32F405RG 参数 Datasheet PDF下载

STM32F405RG图片预览
型号: STM32F405RG
PDF下载: 下载PDF文件 查看货源
内容描述: ARM的Cortex- M4 32B MCUFPU , 210DMIPS ,高达1MB闪存/ 1924KB RAM , USB OTG HS / FS [ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM, USB OTG HS/FS]
分类和应用: 闪存
文件页数/大小: 185 页 / 5432 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM32F405xx, STM32F407xx  
EG = Gain Error: deviation between the last ideal transition and the last actual one.  
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.  
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point  
correlation line.  
Figure 51. Typical connection diagram using the ADC  
STM32F  
V
DD  
Sample and hold ADC  
V
0.6 V  
T
converter  
(1)  
C
(1)  
R
R
AIN  
ADC  
AINx  
12-bit  
converter  
V
T
V
AIN  
0.6 V  
C
(1)  
ADC  
parasitic  
I
1 µA  
L
ai17534  
1. Refer to Table 67 for the values of RAIN, RADC and CADC  
.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the  
pad capacitance (roughly 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this,  
fADC should be reduced.  
132/185  
DocID022152 Rev 4  
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