ST92F124/F150/F250 - ELECTRICAL CHARACTERISTICS
3 TM
FLASH / E
SPECIFICATIONS
(V = 5V ± 10%, T = –40°C to +125°C, unless otherwise specified
DD
A
Parameter
Byte Program
Min
Typ
10
Max
250
4
Unit
µs
s
128 kbytes Flash Program
64 kbytes Flash Sector Erase
128 kbytes Flash Chip Erase
Erase Suspend Latency
1.3
1.5
3
30
s
MAIN FLASH
30
s
15
µs
µs
Recovery from Power-Down
10
16 bytes Page Update
3 TM
(1)
E
30
200
ms
3 TM
(1k E
) -40°C +105°C
Flash Endurance 25°C
10000
3000
cycles
Flash Endurance
RELIABILITY
3 TM
(2)
E
Endurance
800000
15
page updates
years
Data Retention
Note:
(1) The maximum value depends on the number of E3 cycles/sector as shown in Figure 160. This maximum value corresponds to the worst
3 TM
3 TM
case E
page update, 1 of 4 consecutive write operations at the same E
address (refer to AN1152). In any case, the page update
operation starts with the write operation of the data (160 µs max). Then, one of the 4 erase operations of the unused sector may be per-
formed, leading to the worst case.
3 TM
(2) Relational calculation between E
Note (ref. AN1152).
page updates and single byte cycling is provided in a dedicated STMicroelectronics Application
Figure 160. Evolution of Worst Case E3 Page Update Time
Page Update Max
300
T =125°C
A
200
100
T =105°C
A
T =25°C
A
80
400
800
k page updates
380/426
1
STMICROELECTRONICS [ ST ]
