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ST10F276S-4T3 参数 Datasheet PDF下载

ST10F276S-4T3图片预览
型号: ST10F276S-4T3
PDF下载: 下载PDF文件 查看货源
内容描述: 16位MCU与MAC单元832 KB的闪存和68 KB的RAM [16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM]
分类和应用: 闪存
文件页数/大小: 235 页 / 2491 K
品牌: STMICROELECTRONICS [ ST ]
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ST10F276E  
Electrical characteristics  
above, it is simple to derive the following relation between the ideal and real sampled volt-  
age on CS:  
V
C
+ C  
+ C  
F
A
P1  
----------- = ------------------------------------------------------------  
+ C + C + C  
P2  
V
C
A2  
P1  
P2  
F
S
From this formula, in the worst case (when VA is maximum, that is for instance 5V), assum-  
ing to accept a maximum error of half a count (~2.44mV), it is immediately evident that a  
constraint is on CF value:  
C
> 2048 C⋅  
S
F
The next section provides an example of how to design the external network, based on  
some reasonable values for the internal parameters and on a hypothesis on the characteris-  
tics of the analog signal to be sampled.  
23.7.6  
Example of external network sizing  
The following hypothesis is formulated in order to proceed with designing the external net-  
work on A/D converter input pins:  
Analog signal source bandwidth (f0):  
Conversion rate (fC):  
10 kHz  
25 kHz  
1µs  
Sampling time (TS):  
Pin input capacitance (CP1):  
5pF  
Pin input routing capacitance (CP2):  
Sampling capacitance (CS):  
1pF  
4pF  
Maximum input current injection (IINJ):  
Maximum analog source voltage (VAM)  
Analog source impedance (RS):  
Channel switch resistance (RSW):  
Sampling switch resistance (RAD):  
3mA  
12V  
:
100Ω  
500Ω  
200Ω  
Doc ID 12303 Rev 3  
195/235  
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