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ST10F276S-4T3 参数 Datasheet PDF下载

ST10F276S-4T3图片预览
型号: ST10F276S-4T3
PDF下载: 下载PDF文件 查看货源
内容描述: 16位MCU与MAC单元832 KB的闪存和68 KB的RAM [16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM]
分类和应用: 闪存
文件页数/大小: 235 页 / 2491 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
ST10F276E  
Nonlinearity error  
Nonlinearity error is the deviation between actual and the best-fitting A/D conversion charac-  
teristics (see Figure 46):  
Differential nonlinearity error is the actual step dimension versus the ideal one (1  
LSBIDEAL).  
Integral nonlinearity error is the distance between the center of the actual step and  
the center of the bisector line, in the actual characteristics. Note that for integral  
nonlinearity error, the effect of offset, gain and quantization errors is not included.  
Note:  
Bisector characteristic is obtained drawing a line from 1/2 LSB before the first step of the  
real characteristic, and 1/2 LSB after the last step again of the real characteristic.  
23.7.3  
Total unadjusted error  
The total unadjusted error (TUE) specifies the maximum deviation from the ideal character-  
istic: The number provided in the datasheet represents the maximum error with respect to  
the entire characteristic. It is a combination of the offset, gain and integral linearity errors.  
The different errors may compensate each other depending on the relative sign of the offset  
and gain errors. Refer to Figure 46, see TUE.  
Figure 46. A/D conversion characteristic  
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190/235  
Doc ID 12303 Rev 3  
 
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