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NAND256R4A0AZA6F 参数 Datasheet PDF下载

NAND256R4A0AZA6F图片预览
型号: NAND256R4A0AZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 [128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 57 页 / 916 K
品牌: STMICROELECTRONICS [ ST ]
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A  
COMMAND SET  
All bus write operations to the device are interpret-  
ed by the Command Interface. The Commands  
are input on I/O0-I/O7 and are latched on the rising  
edge of Write Enable when the Command Latch  
Enable signal is high. Device operations are se-  
lected by writing specific commands to the Com-  
mand Register. The two-step command  
sequences for program and erase operations are  
imposed to maximize data security.  
The Commands are summarized in Table  
9., Commands.  
Table 9. Commands  
(1)  
Bus Write Operations  
Command accepted  
during busy  
Command  
st  
nd  
rd  
1
CYCLE  
2
CYCLE  
3
CYCLE  
Read A  
Read B  
00h  
-
-
-
-
(2)  
01h  
Read C  
50h  
90h  
70h  
80h  
00h  
60h  
FFh  
-
-
-
Read Electronic Signature  
Read Status Register  
Page Program  
Copy Back Program  
Block Erase  
-
-
-
Yes  
Yes  
10h  
8Ah  
D0h  
-
-
10h  
-
-
Reset  
Note: 1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown.  
2. Any undefined command sequence will be ignored by the device.  
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