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NAND256R4A0AZA6F 参数 Datasheet PDF下载

NAND256R4A0AZA6F图片预览
型号: NAND256R4A0AZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 [128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 57 页 / 916 K
品牌: STMICROELECTRONICS [ ST ]
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A  
SIGNAL DESCRIPTIONS  
See Figure 2., Logic Diagram, and Table  
3., Signal Names, for a brief overview of the sig-  
nals connected to this device.  
tions. Data is valid tRLQV after the falling edge of R.  
The falling edge of R also increments the internal  
column address counter by one.  
Inputs/Outputs (I/O0-I/O7). Input/Outputs 0 to 7  
are used to input the selected address, output the  
data during a Read operation or input a command  
or data during a Write operation. The inputs are  
latched on the rising edge of Write Enable. I/O0-I/  
O7 are left floating when the device is deselected  
or the outputs are disabled.  
Write Enable (W). The Write Enable input, W,  
controls writing to the Command Interface, Input  
Address and Data latches. Both addresses and  
data are latched on the rising edge of Write En-  
able.  
During power-up and power-down a recovery time  
of 1µs (min) is required before the Command Inter-  
face is ready to accept a command. It is recom-  
mended to keep Write Enable high during the  
recovery time.  
Inputs/Outputs (I/O8-I/O15). Input/Outputs 8 to  
15 are only available in x16 devices. They are  
used to output the data during a Read operation or  
input data during a Write operation. Command and  
Address Inputs only require I/O0 to I/O7.  
The inputs are latched on the rising edge of Write  
Enable. I/O8-I/O15 are left floating when the de-  
vice is deselected or the outputs are disabled.  
Write Protect (WP). The Write Protect pin is an  
input that gives a hardware protection against un-  
wanted program or erase operations. When Write  
Protect is Low, VIL, the device does not accept any  
program or erase operations.  
It is recommended to keep the Write Protect pin  
Low, VIL, during power-up and power-down.  
Address Latch Enable (AL). The Address Latch  
Enable activates the latching of the Address inputs  
in the Command Interface. When AL is high, the  
inputs are latched on the rising edge of Write En-  
able.  
Ready/Busy (RB). The Ready/Busy output, RB,  
is an open-drain output that can be used to identify  
if the P/E/R Controller is currently active.  
When Ready/Busy is Low, VOL, a read, program or  
erase operation is in progress. When the operation  
Command Latch Enable (CL). The Command  
Latch Enable activates the latching of the Com-  
mand inputs in the Command Interface. When CL  
is high, the inputs are latched on the rising edge of  
Write Enable.  
completes Ready/Busy goes High, VOH  
.
The use of an open-drain output allows the Ready/  
Busy pins from several memories to be connected  
to a single pull-up resistor. A Low will then indicate  
that one, or more, of the memories is busy.  
Refer to the Ready/Busy Signal Electrical Charac-  
teristics section for details on how to calculate the  
value of the pull-up resistor.  
Chip Enable (E). The Chip Enable input acti-  
vates the memory control logic, input buffers, de-  
coders and sense amplifiers. When Chip Enable is  
low, VIL, the device is selected.  
While the device is busy programming or erasing,  
Chip Enable transitions to High, VIH, are ignored  
and the device does not revert to the Standby  
mode.  
V
DD Supply Voltage. VDD provides the power  
supply to the internal core of the memory device.  
It is the main power supply for all operations (read,  
program and erase).  
While the device is busy reading:  
An internal voltage detector disables all functions  
whenever VDD is below 2.5V (for 3V devices) or  
1.5V (for 1.8V devices) to protect the device from  
any involuntary program/erase during power-tran-  
sitions.  
Each device in a system should have VDD decou-  
pled with a 0.1µF capacitor. The PCB track widths  
should be sufficient to carry the required program  
and erase currents  
the Chip Enable input should be held Low  
during the whole busy time (tBLBH1) for  
devices that do not present the Chip Enable  
Don’t Care option. Otherwise, the read  
operation in progress is interrupted and the  
device reverts to the Standby mode.  
for devices that feature the Chip Enable Don't  
Care option, Chip Enable going High during  
the busy time (tBLBH1) will not interrupt the  
read operation and the device will not revert to  
the Standby mode.  
V
SS Ground. Ground, VSS, is the reference for  
the power supply. It must be connected to the sys-  
tem ground.  
Read Enable (R). The Read Enable, R, controls  
the sequential data output during Read opera-  
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