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NAND256R4A0AZA6F 参数 Datasheet PDF下载

NAND256R4A0AZA6F图片预览
型号: NAND256R4A0AZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆, 256兆, 512兆, 1千兆( X8 / X16 ), 528字节/字264页, 1.8V / 3V , NAND闪存 [128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 57 页 / 916 K
品牌: STMICROELECTRONICS [ ST ]
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A  
Figure 13. Read (A,B,C) Operations  
CL  
E
W
AL  
R
tBLBH1  
(read)  
RB  
00h/  
I/O  
Data Output (sequentially)  
Address Input  
01h/ 50h  
Command  
Code  
Busy  
ai07595  
Figure 14. Read Block Diagrams  
Read A Command, X8 Devices  
Read A Command, X16 Devices  
Area B  
(2nd half Page)  
Area A  
(1st half Page)  
Area C  
(Spare)  
Area A  
(main area)  
Area C  
(Spare)  
(1)  
A9-A26  
(1)  
A9-A26  
A0-A7  
A0-A7  
Read B Command, X8 Devices  
Read C Command, X8/x16 Devices  
Area B  
(2nd half Page)  
Area A/ B  
Area A  
(1st half Page)  
Area C  
(Spare)  
Area A  
Area C  
(Spare)  
(1)  
A9-A26  
(1)  
A9-A26  
A0-A3 (x8)  
A0-A2 (x16)  
A0-A7  
A4-A7 (x8), A3-A7 (x16) are don't care  
AI07596  
Note: 1. Highest address depends on device density.  
23/57  
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