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M59PW1282-120M1T 参数 Datasheet PDF下载

M59PW1282-120M1T图片预览
型号: M59PW1282-120M1T
PDF下载: 下载PDF文件 查看货源
内容描述: 的128Mbit ( 2 64MB, X16 ,统一座LightFlash⑩ ) 3V电源,多个存储产品 [128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product]
分类和应用: 存储
文件页数/大小: 24 页 / 417 K
品牌: STMICROELECTRONICS [ ST ]
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M59PW1282  
BUS OPERATIONS  
There are six standard bus operations that control  
the device. These are Bus Read, Bus Write, Out-  
put Disable, Standby, Automatic Standby and  
Electronic Signature. See Tables 3, Bus Opera-  
tions, for a summary. Typically glitches of less  
than 5ns on Chip Enable or Write Enable are ig-  
nored by the memory and do not affect bus opera-  
tions.  
Bus Read. Bus Read operations read from the  
memory cells, or specific registers in the Com-  
mand Interface. A valid Bus Read operation in-  
volves setting the desired address on the Address  
Characteristics, for details of the timing require-  
ments.  
Output Disable. The Data Inputs/Outputs are in  
the high impedance state when Output Enable is  
High, V .  
IH  
Standby. When Chip Enable is High, V , the  
IH  
memory enters Standby mode and the Data In-  
puts/Outputs pins are placed in the high-imped-  
ance state. To reduce the Supply Current to the  
Standby Supply Current, I  
, Chip Enable should  
CC2  
be held within V ± 0.2V. For the Standby current  
CC  
level see Table 12, DC Characteristics.  
During program operation the memory will contin-  
Inputs and applying a Low signal, V , to Chip En-  
IL  
able and Output Enable. The Data Inputs/Outputs  
will output the value, see Figure 12, Read AC  
Waveforms, and Table 12, Read AC Characteris-  
tics, for details of when the output becomes valid.  
ue to use the Program Supply Current, I  
, for  
CC3  
Program operation until the operation completes.  
Automatic Standby. If CMOS levels (V ± 0.2V)  
CC  
are used to drive the bus and the bus is inactive for  
150ns or more the memory enters Automatic  
Standby where the internal Supply Current is re-  
During read array operations A22 selects Top  
(A22 = V ) or Bottom (A22 = V ) die.  
IH  
IL  
Bus Write. Bus Write operations write to the  
Command Interface. Bus Write is enabled only  
duced to the Standby Supply Current, I  
. The  
CC2  
Data Inputs/Outputs will still output data if a Bus  
Read operation is in progress.  
when V is set to V . A valid Bus Write opera-  
PP  
HH  
tion begins by setting the desired address on the  
Address Inputs. The Address Inputs are latched by  
the Command Interface on the falling edge of Chip  
Enable. The Data Inputs/Outputs are latched by  
the Command Interface on the rising edge of Chip  
Electronic Signature. The memory has two  
codes, the manufacturer code and the device  
code, that can be read to identify the memory.  
These codes can be read by applying the signals  
listed in Tables 3, Bus Operations, once the Auto  
Select Command is executed. To exit Electronic  
Signature mode, the Read/Reset command must  
be issued.  
Enable. Output Enable must remain High, V ,  
IH  
during the whole Bus Write operation. See Figure  
12, Write AC Waveforms, and Table 14, Write AC  
Table 3. Bus Operations  
Address Inputs  
A0-A21  
Data Inputs/Outputs  
DQ15-DQ0  
(2)  
PP  
Operation  
Bus Read  
E
G
A22/V  
(3)  
V
V
IL  
Cell Address  
Data Output  
V /V  
IL  
IL  
IL IH  
(4)  
V
V
IH  
V
IH  
Bus Write  
Command Address  
Data Input  
Hi-Z  
V
HH  
Output Disable  
Standby  
X
X
X
X
X
V
IH  
X
Hi-Z  
A0 = V , A1 = V ,  
Read Manufacturer  
Code  
IL  
IL  
V
V
V
V
0020h  
88AAh  
IL  
IL  
IL  
IL  
HH  
Others V or V  
IL  
IH  
A0 = V , A1 = V ,  
IH  
IL  
V
V
HH  
Read Device Code  
Others V or V  
IL  
IH  
Note: 1. X = V or V  
.
IH  
IL  
2. When reading the Status Register during a program operation A22/V must be kept at V  
.
HH  
PP  
3. V enables the Bottom die, V enables the Top die during read array operation.  
IL  
IH  
4. V after latching A22 at V or V .  
IH  
HH  
IL  
8/24  
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