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M59PW1282-120M1T 参数 Datasheet PDF下载

M59PW1282-120M1T图片预览
型号: M59PW1282-120M1T
PDF下载: 下载PDF文件 查看货源
内容描述: 的128Mbit ( 2 64MB, X16 ,统一座LightFlash⑩ ) 3V电源,多个存储产品 [128Mbit (two 64Mb, x16, Uniform Block, LightFlash⑩) 3V Supply, Multiple Memory Product]
分类和应用: 存储
文件页数/大小: 24 页 / 417 K
品牌: STMICROELECTRONICS [ ST ]
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M59PW1282  
COMMAND INTERFACE  
All Bus Write operations to the memory are inter-  
preted by the Command Interface. Commands  
consist of one or more sequential Bus Write oper-  
ations. Failure to observe a valid sequence of Bus  
Write operations will result in the memory return-  
ing to Read mode. The long command sequences  
are imposed to maximize data security.  
Refer to Tables 4 and 5, for a summary of the com-  
mands.  
As the device contains two internal memories care  
must be taken to issue the commands to the cor-  
vert to Read/Reset mode. The command requires  
four Bus Write operations, the final write operation  
latches the address and data in the internal state  
machine and starts the P/E.C.  
During the program operation the memory will ig-  
nore all commands. It is not possible to issue any  
command to abort or pause the operation. Typical  
program times are given in Table 6. Bus Read op-  
erations during the program operation will output  
the Status Register on the Data Inputs/Outputs.  
See the section on the Status Register for more  
details.  
rect address. To select the Top die (A22 = V ) or  
IH  
the Bottom die (A22 = V ) the A22 latch procedure  
(see Figure 4) must be followed.  
After the program operation has completed the  
memory will return to the Read mode, unless an  
error has occurred. When an error occurs the  
memory will continue to output the Status Regis-  
ter. A Read/Reset command must be issued to re-  
set the error condition and return to Read mode.  
Note that the Program command cannot change a  
bit set at ’0’ back to ’1’.  
Multiple Word Program Command  
The Multiple Word Program command can be  
used to program large streams of data. It greatly  
reduces the total programming time when a large  
number of Words are written in the memory at  
IL  
It is not necessary to repeat the A22 latch proce-  
dure if all the commands are issued to the same  
die, unless the power supply V is switched off.  
CC  
Read/Reset Command.  
The Read/Reset command returns the memory to  
its Read mode where it behaves like a ROM or  
EPROM, unless otherwise stated. It also resets  
the errors in the Status Register. Either one or  
three Bus Write operations can be used to issue  
the Read/Reset command.  
V
must be set to V  
during the Read/Reset  
PP  
HH  
once. V must be set to V during Multiple Word  
PP  
HH  
command. If V is set to either V or V the com-  
PP  
IL  
IH  
Program. If V is set either V or V the com-  
PP  
IL  
IH  
mand will be ignored. The command can be is-  
sued, between Bus Write cycles before the start of  
a program operation, to return the device to read  
mode. Once the program operation has started the  
Read/Reset command is no longer accepted.  
mand will be ignored, the data will remain un-  
changed and the device will revert to Read mode.  
It has four phases: the Setup Phase to initiate the  
command, the Program Phase to program the  
data to the memory, the Verify Phase to check that  
the data has been correctly programmed and re-  
program if necessary and the Exit Phase.  
Setup Phase. The Multiple Word Program com-  
mand requires three Bus Write operations to ini-  
tiate the command (refer to Table 4, Multiple Word  
Program Command and Figure 8, Multiple Word  
Program Flowchart).  
The Status Register must be read in order to  
check that the P/E.C. has started (see Table 8 and  
Figure 8).  
Auto Select Command.  
The Auto Select command is used to read the  
Manufacturer Code and the Device Code. V  
PP  
must be set to V  
during the Auto Select com-  
HH  
mand. If V is set to either V or V the com-  
PP  
IL  
IH  
mand will be ignored. Three consecutive Bus  
Write operations are required to issue the Auto Se-  
lect command. Once the Auto Select command is  
issued the memory remains in Auto Select mode  
until a Read/Reset command is issued, all other  
commands are ignored.  
From the Auto Select mode the Manufacturer  
Code can be read using a Bus Read operation  
Program Phase. The Program Phase requires  
n+1 Bus Write operations, where n is the number  
of Words, to execute the programming phase (re-  
fer to Table 5, Multiple Word Program and Figure  
7, Multiple Word Program Flowchart).  
Before any Bus Write operation of the Program  
Phase, the Status Register must be read in order  
to check that the P/E.C. is ready to accept the op-  
eration (see Table 8 and Figure 8).  
with A0 = V and A1 = V . The other address bits  
IL  
IL  
may be set to either V or V .  
IL  
IH  
The Device Code can be read using a Bus Read  
operation with A0 = V and A1 = V . The other  
IH  
IL  
address bits may be set to either V or V .  
IL  
IH  
Word Program Command.  
The Word Program command can be used to pro-  
gram a Word to the memory array. V must be  
The Program Phase is executed in three different  
sub-phases:  
PP  
set to V during Word Program. If V is set to ei-  
HH  
PP  
ther V or V the command will be ignored, the  
data will remain unchanged and the device will re-  
1. The first Bus Write operation of the Program  
Phase (the 4th of the command) latches the  
IL  
IH  
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