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SST34HF1682S-70-4E-B1SE 参数 Datasheet PDF下载

SST34HF1682S-70-4E-B1SE图片预览
型号: SST34HF1682S-70-4E-B1SE
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位并行的SuperFlash + 2/4/8兆位的SRAM ComboMemory [16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory]
分类和应用: 静态存储器
文件页数/大小: 38 页 / 482 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory  
SST34HF1602C / SST34HF1622C / SST34HF1642C  
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S  
Advance Information  
T
RCS  
ADDRESSES A  
MSS-0  
T
T
OHS  
AAS  
T
BES1#  
BES2  
BES  
T
BES  
T
T
BLZS  
BHZS  
T
OES  
OE#  
T
OLZS  
T
OHZS  
T
BYES  
UBS#, LBS#  
T
BYLZS  
T
BYHZS  
DQ  
15-0  
DATA VALID  
1256 F04.0  
Note: AMSS = Most Significant Address  
MSS = A16 for SST34HF1622C/S, A17 for SST34HF1622C/D/S, and A18 for SST34HF1682D  
For SST34HF16x2S, LBS# and UBS# are No Connect and in x8 mode, the additional SRAM address is SA.  
A
FIGURE 5: (P)SRAM READ CYCLE TIMING DIAGRAM  
T
WCS  
3
ADDRESSES A  
MSS -0  
T
T
ASTS  
T
WPS  
WRS  
WE#  
BES1#  
BES2  
T
AWS  
T
BWS  
T
T
BWS  
BYWS  
UBS#, LBS#  
T
OEWS  
T
DHS  
T
ODWS  
T
DSS  
VALID DATA IN  
NOTE 2  
NOTE 2  
DQ  
DQ  
7-0  
15-8,  
1256 F05.0  
Note: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.  
2. If BES1# goes Low or BES2 goes high coincident with or after WE# goes Low, the output will remain at high impedance.  
If BES1# goes High or BES2 goes low coincident with or before WE# goes High, the output will remain at high impedance.  
Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.  
3. AMSS = Most Significant SRAM Address  
A
MSS = A16 for SST34HF1622C/S, A17 for SST34HF1622C/D/S, and A18 for SST34HF1682D  
For SST34HF16x2S, LBS# and UBS# are No Connect and in x8 mode, the additional SRAM address is SA.  
FIGURE 6: (P)SRAM WRITE CYCLE TIMING DIAGRAM (WE# CONTROLLED)1  
©2004 Silicon Storage Technology, Inc.  
S71256-00-000  
3/04  
20  
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