16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
Advance Information
TABLE 8: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V)
Limits
Symbol Parameter
Min
Max Units Test Conditions
Address input = VILT/VIHT, at f=1/TRC Min,
1
IDD
Active VDD Current
VDD=VDD Max, all DQs open
Read
Flash
OE#=VIL, WE#=VIH
35
30
60
mA
mA
mA
BEF#=VIL, BES1#=VIH, or BES2=VIL
BEF#=VIH, BES1#=VIL , BES2=VIH
BEF#=VIH, BES1#=VIL , BES2=VIH
WE#=VIL
(P)SRAM
Concurrent Operation
Write2
Flash
40
30
mA
mA
BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH
BEF#=VIH, BES1#=VIL , BES2=VIH
VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC
(P)SRAM
ISB
Standby VDD Current SRAM
PSRAM
30
85
µA
µA
IRT
ILI
Reset VDD Current
30
1
µA
µA
µA
RST#=GND
Input Leakage Current
VIN=GND to VDD, VDD=VDD Max
ILIW
Input Leakage Current
on WP# pin and RST# pin
10
WP#=GND to VDD, VDD=VDD Max
RST#=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
Input Low Voltage
10
0.8
0.3
µA
V
V
V
V
V
V
V
V
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VIL
VILC
VIH
Input Low Voltage (CMOS)
Input High Voltage
VDD=VDD Max
0.7 VDD
VDD-0.3
VDD=VDD Max
VIHC
VOLF
VOHF
VOLS
VOHS
Input High Voltage (CMOS)
Flash Output Low Voltage
Flash Output High Voltage
(P)SRAM Output Low Voltage
(P)SRAM Output High Voltage
VDD=VDD Max
0.2
0.4
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
IOL =1 mA, VDD=VDD Min
VDD-0.2
2.2
IOH =-500 µA, VDD=VDD Min
T8.0 1256
1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 20)
2. IDD active while Erase or Program is in progress.
©2004 Silicon Storage Technology, Inc.
S71256-00-000
3/04
16
SST [ SILICON STORAGE TECHNOLOGY, INC ]
