16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
Advance Information
TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
100
Units
1
TPU-READ
Power-up to Read Operation
Power-up to Write Operation
µs
1
TPU-WRITE
100
µs
T9.0 1256
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VI/O = 0V
Maximum
20 pF
1
CI/O
I/O Pin Capacitance
Input Capacitance
1
CIN
VIN = 0V
16 pF
T10.0 1256
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: FLASH RELIABILITY CHARACTERISTICS
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Test Method
1
NEND
10,000
100
Cycles JEDEC Standard A117
1
TDR
Years
mA
JEDEC Standard A103
JEDEC Standard 78
1
ILTH
100 + IDD
T11.0 1256
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2004 Silicon Storage Technology, Inc.
S71256-00-000
3/04
17
SST [ SILICON STORAGE TECHNOLOGY, INC ]
