2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
Data Sheet
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 5.0V±10% FOR SST29EE020
Limits
Max Units Test Conditions
Address input=VIL/VIH, at f=1/TRC Min,
Symbol Parameter
Min
IDD
Power Supply Current
VDD=VDD Max
Read
Write
30
50
3
mA
mA
mA
CE#=OE#=VIL, WE#=VIH, all I/Os open
CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
CE#=OE#=WE#=VIH, VDD=VDD Max
ISB1
ISB2
Standby VDD Current
(TTL input)
Standby VDD Current
(CMOS input)
50
µA
CE#=OE#=WE#=VDD-0.3V, VDD=VDD Max
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
1
µA
µA
V
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILO
VIL
VIH
VOL
VOH
10
0.8
Input High Voltage
2.0
2.4
V
VDD=VDD Max
Output Low Voltage
Output High Voltage
0.4
V
IOL=2.1 mA, VDD=VDD Min
IOH=-400 µA, VDD=VDD Min
V
T5.2 307
TABLE 6: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST29LE020 AND 2.7-3.0V FOR SST29VE020
Limits
Symbol Parameter
Min
Max Units Test Conditions
Address input=VIL/VIH, at f=1/TRC Min,
IDD
Power Supply Current
VDD=VDD Max
Read
Write
12
15
1
mA
mA
mA
CE#=OE#=VIL, WE#=VIH, all I/Os open
CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
CE#=OE#=WE#=VIH, VDD=VDD Max
ISB1
ISB2
Standby VDD Current
(TTL input)
Standby VDD Current
(CMOS input)
15
µA
CE#=OE#=WE#=VDD-0.3V, VDD=VDD Max
ILI
Input Leakage Current
Output Leakage Current
Input Low Voltage
1
µA
µA
V
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
ILO
VIL
VIH
VOL
VOH
10
0.8
Input High Voltage
2.0
2.4
V
VDD=VDD Max
Output Low Voltage
Output High Voltage
0.4
V
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
V
T6.2 307
©2001 Silicon Storage Technology, Inc.
S71062-06-000 6/01 307
8
SST [ SILICON STORAGE TECHNOLOGY, INC ]
