2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
Data Sheet
TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
µs
1
TPU-READ
Power-up to Read Operation
Power-up to Write Operation
100
5
1
TPU-WRITE
ms
T7.1 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VI/O = 0V
Maximum
1
CI/O
I/O Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T8.0 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Test Method
1
NEND
10,000
100
Cycles JEDEC Standard A117
1
TDR
Years
mA
JEDEC Standard A103
JEDEC Standard 78
1
ILTH
100
T9.5 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
S71062-06-000 6/01 307
9
SST [ SILICON STORAGE TECHNOLOGY, INC ]
