2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
Data Sheet
AC CHARACTERISTICS
TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE020
SST29EE020-120
SST29EE020-150
Symbol
TRC
Parameter
Min
Max
Min
Max
Units
ns
Read Cycle Time
120
150
TCE
Chip Enable Access Time
Address Access Time
120
120
50
150
150
60
ns
TAA
ns
TOE
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
ns
1
TCLZ
0
0
0
0
ns
1
TOLZ
ns
1
TCHZ
30
30
30
30
ns
1
TOHZ
ns
1
TOH
0
0
ns
T10.4 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29LE020
SST29LE020-200
SST29LE020-250
Symbol
TRC
Parameter
Min
Max
Min
Max
Units
ns
Read Cycle Time
200
250
TCE
Chip Enable Access Time
Address Access Time
200
200
100
250
250
120
ns
TAA
ns
TOE
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
ns
1
TCLZ
0
0
0
0
ns
1
TOLZ
ns
1
TCHZ
50
50
50
50
ns
1
TOHZ
ns
1
TOH
0
0
ns
T11.1 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: READ CYCLE TIMING PARAMETERS FOR SST29VE020
SST29VE020-200
SST29VE020-250
Symbol
TRC
Parameter
Min
Max
Min
Max
Units
ns
Read Cycle Time
200
250
TCE
Chip Enable Access Time
Address Access Time
200
200
100
250
250
120
ns
TAA
ns
TOE
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
ns
1
TCLZ
0
0
0
0
ns
1
TOLZ
ns
1
TCHZ
50
50
50
50
ns
1
TOHZ
ns
1
TOH
0
0
ns
T12.1 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
S71062-06-000 6/01 307
10
SST [ SILICON STORAGE TECHNOLOGY, INC ]
