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SST26WF032-80-4I-S2AE 参数 Datasheet PDF下载

SST26WF032-80-4I-S2AE图片预览
型号: SST26WF032-80-4I-S2AE
PDF下载: 下载PDF文件 查看货源
内容描述: 1.8V串行四I / O( SQI )快闪记忆体 [1.8V Serial Quad I/O (SQI) Flash Memory]
分类和应用:
文件页数/大小: 36 页 / 1340 K
品牌: SST [ SILICON STORAGE TECHNOLOGY, INC ]
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1.8V Serial Quad I/O (SQI) Flash Memory  
SST26WF032  
Advance Information  
Page-Program  
The Page-Program instruction programs up to 256 Bytes of data in the memory. The data for the  
selected page address must be in the erased state (FFH) before initiating the Page-Program operation.  
A Page-Program applied to a protected memory area will be ignored. Prior to the program operation,  
execute the WREN instruction.  
To execute a Page-Program operation, the host drives CE# low then sends the Page Program com-  
mand cycle (02H), three address cycles followed by the data to be programmed, then drives CE# high.  
The programmed data must be between 1 to 256 Bytes and in whole Byte increments; sending an odd  
number of nibbles will cause the last nibble to be ignored. Each cycle is two nibbles (clocks) long, most  
significant bit first. Poll the BUSY bit in the Status register or wait TPP for the completion of the internal,  
self-timed, Page-Program operation. See Figure 18 for the Page-Program sequence.  
When executing Page-Program, the memory range for the SST26WF032 is divided into 256 Byte page  
boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last 256  
Bytes of data as the correct data to be programmed. If the target address for the Page-Program  
instruction is not the beginning of the page boundary (A7:A0 are not all zero), and the number of data  
input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap  
around and will be programmed at the start of that target page.  
CE#  
MODE 3  
MODE 0  
0
2
4
6
8
10  
12  
542  
SCK  
SIO(3:0)  
C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2  
HN LN  
MSN LSN  
Data Byte 0  
Data Byte 1 Data Byte 2  
Data Byte 255  
1409 F10.0  
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble  
C[1:0] = 02H  
Figure 18:Page-Program Sequence  
Write-Suspend and Write-Resume  
Write-Suspend allows the interruption of Sector-Erase, Block-Erase or Page-Program operations in  
order to erase, program, or read data in another portion of memory. The original operation can be con-  
tinued with the Write-Resume command.  
Only one write operation can be suspended at a time; if an operation is already suspended, the device  
will ignore the Write-Suspend command. Write-Suspend during Chip-Erase is ignored; Chip-Erase is  
not a valid command while a write is suspended.  
Write-Suspend During Sector-Erase or Block-Erase  
Issuing a Write-Suspend instruction during Sector-Erase or Block-Erase allows the host to program or  
read any sector that was not being erased. The device will ignore any programming commands point-  
ing to the suspended sector(s). Any attempt to read from the suspended sector(s) will output unknown  
data because the Sector- or Block-Erase will be incomplete.  
©2010 Silicon Storage Technology, Inc.  
S71409-01-000  
01/10  
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