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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Speed Bins  
70ns  
Parameter List  
Write cycle time  
Symbol  
tWC  
tCW  
tAS  
Min  
Max  
Units  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
70  
60  
0
-
-
Chip select to end of write  
Address set-up time  
-
Address valid to end of write  
LB#, UB# valid to end of write  
Write pulse width  
tAW  
60  
60  
50  
0
-
tBW  
-
tWP  
-
Write recovery time  
tWR  
tWHZ  
tDW  
tDH  
-
Write to output high-Z  
Data to write time overlap  
Data hold from write time  
End write to output low-Z  
0
20  
-
30  
0
-
tOW  
5
-
Data Retention Characteristics (4M Version F)  
Item  
Symbol  
Test Condition  
Min  
Typ  
Max Unit  
VCC for data retention  
VDR  
CS1#  
VCC-0.2V (Note 1), VIN 0V. BYTE# = VSS or VCC 1.5  
-
3.3  
10  
V
1.0  
(Note 2)  
Data retention current  
IDR  
VCC=3.0V, CS1#  
VCC-0.2V (Note 1), VIN  
0V  
-
µA  
Data retention set-up time  
Recovery time  
tSDR  
tRDR  
0
-
-
-
-
See data retention waveform  
ns  
tRC  
Notes:  
1. CS1 controlled:CS1#VCC-0.2V. CS2 controlled: CS2 0.2V.  
2. Typical values are not 100% tested.  
March 31, 2005 S71GL032A_00_A0  
S71GL032A Based MCPs  
97  
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