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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
DC Characteristics  
Recommended DC Operating Conditions (Note 1)  
Item  
Symbol  
VCC  
Min  
Typ  
3.0  
0
Max  
Unit  
V
Supply voltage  
Ground  
2.7  
3.3  
VSS  
0
2.2  
0
VCC+0.2 (Note 2)  
0.6  
V
Input high voltage  
Input low voltage  
VIH  
-
V
VIL  
-0.2 (Note 3)  
-
V
Notes:  
1. T = -40 to 85°C, unless otherwise specified.  
A
2. Overshoot: Vcc+1.0V in case of pulse width 20ns.  
3. Undershoot: -1.0V in case of pulse width 20ns.  
4. Overshoot and undershoot are sampled, not 100% tested.  
Capacitance (f=1MHz, TA=25°C)  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
Input capacitance  
VIN=0V  
VIO=0V  
-
-
pF  
pF  
Input/Output capacitance  
CIO  
10  
Note: Capacitance is sampled, not 100% tested  
DC Operating Characteristics  
Common  
Typ  
Min (Note) Max  
Item  
Symbol  
Test Conditions  
Unit  
Input leakage current  
ILI  
VIN=VSS to VCC  
CS1#=VIH or CS2=VIL or OE#=VIH or  
-1  
-1  
-
-
1
1
µ
A
A
Output leakage current  
ILO  
µ
WE#=VIL or LB#=UB#=VIH, VIO=Vss to VCC  
Output low voltage  
Output high voltage  
VOL  
VOH  
IOL = 2.1mA  
-
-
-
0.4  
-
V
IOH = -1.0mA  
2.4  
V
March 31, 2005 S71GL032A_00_A0  
S71GL032A Based MCPs  
93  
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