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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
tWC  
Address  
CS1#  
tAS(3)  
tCW(2)  
tAW  
tWR(4)  
CS2  
UB#, LB#  
WE#  
tBW  
tWP(1)  
tDW  
Data Valid  
tDH  
Data in  
Data out  
High-Z  
High-Z  
Figure 36. Timing Waveform of Write Cycle(2) (CS# controlled, if BYTE# is Low, Ignore UB#/LB# Timing)  
tWC  
Address  
tCW(2)  
tWR(4)  
CS1#  
tAW  
CS2  
tCW(2)  
tBW  
UB#, LB#  
tAS(3)  
tWP(1)  
WE#  
tDH  
tDW  
Data Valid  
Data in  
Data out  
High-Z  
High-Z  
Notes:  
1. A write occurs during the overlap (t ) of low CS1# and low WE#. A write begins when CS1# goes low and WE#  
WP  
goes low with asserting UB# or LB# for single byte operation or simultaneously asserting UB# and LB# for double  
byte operation. A write ends at the earliest transition when CS1# goes high and WE# goes high. The t  
measured from the beginning of write to the end of write.  
is  
WP  
2. t  
is measured from the CS1# going low to the end of write.  
CW  
3. t is measured from the address valid to the beginning of write.  
AS  
4. t  
is measured from the end of write to the address change. t  
applied in case a write ends as CS1# or WE#  
WR  
WR  
going high.  
Figure 37. Timing Waveform of Write Cycle(3) (UB#, LB# controlled)  
100  
S71GL032A Based MCPs  
S71GL032A_00_A0 March 31, 2005  
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