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S71GL064A80BAI0F3 参数 Datasheet PDF下载

S71GL064A80BAI0F3图片预览
型号: S71GL064A80BAI0F3
PDF下载: 下载PDF文件 查看货源
内容描述: 堆叠式多芯片产品( MCP )闪存和RAM [Stacked Multi-Chip Product (MCP) Flash Memory and RAM]
分类和应用: 闪存
文件页数/大小: 102 页 / 1762 K
品牌: SPANSION [ SPANSION ]
 浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第94页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第95页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第96页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第97页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第98页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第100页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第101页浏览型号S71GL064A80BAI0F3的Datasheet PDF文件第102页  
A d v a n c e I n f o r m a t i o n  
tRC  
Address  
tOH  
tAA  
tCO1  
CS1#  
CS2  
tCO2  
tBA  
tHZ  
UB#, LB#  
tBHZ  
tOHZ  
tOE  
OE#  
tOLZ  
tBLZ  
tLZ  
Data out  
High-Z  
Data Valid  
Notes:  
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to  
output voltage levels.  
2. At any given temperature and voltage condition, t (Max.) is less than t (Min.) both for a given device and from  
HZ  
LZ  
device to device interconnection.  
Figure 34. Timing Waveform of Read Cycle(2) (WE#=VIH, if BYTE# is Low, Ignore UB#/LB# Timing)  
tWC  
Address  
tCW(2)  
tWR(4)  
CS1#  
tAW  
CS2  
tCW(2)  
tBW  
UB#, LB#  
tWP(1)  
WE#  
tAS(3)  
tDW  
Data Valid  
tDH  
High-Z  
High-Z  
Data in  
tWHZ  
tOW  
Data out  
Data Undefined  
Figure 35. Timing Waveform of Write Cycle(1) (WE# controlled, if BYTE# is Low, Ignore UB#/LB# Timing)  
March 31, 2005 S71GL032A_00_A0  
S71GL032A Based MCPs  
99  
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