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S29GL128P90FAIR12 参数 Datasheet PDF下载

S29GL128P90FAIR12图片预览
型号: S29GL128P90FAIR12
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
Figure 11.11 Chip/Sector Erase Operation Timings  
Erase Command Sequence (last two cycles)  
Read Status Data  
tAS  
SA  
tWC  
VA  
VA  
Addresses  
CE#  
2AAh  
555h for chip erase  
tAH  
tCH  
OE#  
tWP  
WE#  
tWPH  
tWHWH2  
tCS  
tDS  
tDH  
In  
Data  
Complete  
55h  
30h  
Progress  
10 for Chip Erase  
tBUSY  
tRB  
RY/BY#  
VCC  
tVCS  
Notes  
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 36.)  
2. These waveforms are for the word mode  
Figure 11.12 Data# Polling Timings (During Embedded Algorithms)  
tRC  
Addresses  
CE#  
VA  
tACC  
tCE  
VA  
VA  
tCH  
tOE  
OE#  
WE#  
tOEH  
tDF  
tOH  
High Z  
High Z  
DQ7  
Valid Data  
Complement  
Complement  
True  
DQ6–DQ0  
Status Data  
True  
Valid Data  
Status Data  
tBUSY  
RY/BY#  
Notes  
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.  
2.  
t
for data polling is 45 ns when V = 1.65 to 2.7 V and is 35 ns when V = 2.7 to 3.6 V  
OE  
IO  
IO  
3. CE# does not need to go high between status bit reads  
62  
S29GL-P MirrorBit® Flash Family  
S29GL-P_00_A7 November 8, 2007  
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