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S29GL128P90FAIR12 参数 Datasheet PDF下载

S29GL128P90FAIR12图片预览
型号: S29GL128P90FAIR12
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有90纳米的MirrorBit工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 77 页 / 2742 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t ( P r e l i m i n a r y )  
Table 11.5 Power-up Sequence Timings  
Parameter  
Description  
Speed  
Unit  
Reset Low Time from rising edge of VCC (or last Reset pulse) to  
rising edge of RESET#  
tVCS  
Min  
35  
µs  
Reset Low Time from rising edge of VIO (or last Reset pulse) to  
rising edge of RESET#  
tVIOS  
tRH  
Min  
Min  
35  
µs  
ns  
Reset High Time before Read  
200  
Notes  
1.  
V
< V + 200 mV.  
CC  
IO  
2.  
V
and V ramp must be synchronized during power up.  
IO  
CC  
3. If RESET# is not stable for t  
or t  
:
VCS  
VIOS  
The device does not permit any read and write operations.  
A valid read operation returns FFh.  
A hardware reset is required.  
4.  
V
maximum power-up current (RST=V ) is 20 mA.  
C
C
I
L
Figure 11.8 Power-up Sequence Timings  
V
CC  
V
V
min  
min  
CC  
V
IO  
IO  
t
RH  
CE#  
t
VIOS  
t
VCS  
RESET#  
November 8, 2007 S29GL-P_00_A7  
S29GL-P MirrorBit® Flash Family  
59  
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