欢迎访问ic37.com |
会员登录 免费注册
发布采购

S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
 浏览型号S29GL256M10TAIR10的Datasheet PDF文件第102页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第103页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第104页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第105页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第107页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第108页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第109页浏览型号S29GL256M10TAIR10的Datasheet PDF文件第110页  
P r e l i m i n a r y  
Accelerated Program  
The device offers accelerated program operations through the WP#/ACC or ACC  
pin depending on the particular product. When the system asserts V on the  
HH  
WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC  
pin to accelerate the operation. Note that the WP#/ACC pin must not be at V  
HH  
for operations other than accelerated programming, or device damage may re-  
sult. WP# has an internal pullup; when unconnected, WP# is at V  
.
IH  
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase  
and Program Operations–“AC Characteristics” section on page 124 section for pa-  
rameters, and Figure 14 for timing diagrams.  
106  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004