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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Autoselect Command Sequence  
The autoselect command sequence allows the host system to read several iden-  
tifier codes at specific addresses:  
A7:A0  
(x16)  
A6:A-1  
(x8)  
Identifier Code  
Manufacturer ID  
Device ID, Cycle 1  
00h  
01h  
00h  
02h  
Device ID, Cycle 2  
0Eh  
1Ch  
Device ID, Cycle 3  
0Fh  
1Eh  
SecSi Sector Factory Protect  
Sector Protect Verify  
03h  
06h  
(SA)02h  
(SA)04h  
Note: The device ID is read over three cycles. SA = Sector Address  
The autoselect command sequence is initiated by first writing two unlock cycles.  
This is followed by a third write cycle that contains the autoselect command. The  
device then enters the autoselect mode. The system may read at any address any  
number of times without initiating another autoselect command sequence:  
The system must write the reset command to return to the read mode (or erase-  
suspend-read mode if the device was previously in Erase Suspend).  
Enter SecSi Sector/Exit SecSi Sector Command Sequence  
The SecSi Sector region provides a secured data area containing an 8-word/16-  
byte random Electronic Serial Number (ESN). The system can access the SecSi  
Sector region by issuing the three-cycle Enter SecSi Sector command sequence.  
The device continues to access the SecSi Sector region until the system issues  
the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector com-  
mand sequence returns the device to normal operation. Table 31 and Table 32  
show the address and data requirements for both command sequences. See also  
“SecSi (Secured Silicon) Sector Flash Memory Region” for further information.  
Note that the ACC function and unlock bypass modes are not available when the  
SecSi Sector is enabled.  
Word Program Command Sequence  
Programming is a four-bus-cycle operation. The program command sequence is  
initiated by writing two unlock write cycles, followed by the program set-up com-  
mand. The program address and data are written next, which in turn initiate the  
Embedded Program algorithm. The system is not required to provide further con-  
trols or timings. The device automatically provides internally generated program  
pulses and verifies the programmed cell margin. Tables 31 and 32 show the ad-  
dress and data requirements for the word program command sequence,  
respectively.  
When the Embedded Program algorithm is complete, the device then returns to  
the read mode and addresses are no longer latched. The system can determine  
the status of the program operation by using DQ7 or DQ6. Refer to the Write Op-  
eration Status section for information on these status bits. Any commands  
written to the device during the Embedded Program Algorithm are ignored. Note  
that the SecSi Sector, autoselect, and CFI functions are unavailable when a pro-  
gram operation is in progress. Note that a hardware reset immediately  
terminates the program operation. The program command sequence should be  
April 30, 2004 S29GLxxxM_00A5  
S29GLxxxM MirrorBitTM Flash Family  
103  
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