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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Write “Write to Buffer”  
command and  
Sector Address  
Part of “Write to Buffer”  
Command Sequence  
Write number of addresses  
to program minus 1(WC)  
and Sector Address  
Write first address/data  
Yes  
WC = 0 ?  
No  
Write to a different  
sector address  
Abort Write to  
Buffer Operation?  
Yes  
Write to buffer ABORTED.  
Must write “Write-to-buffer  
Abort Reset” command  
sequence to return  
No  
Write next address/data pair  
(Note 1)  
to read mode.  
WC = WC - 1  
Write program buffer to  
flash sector address  
Read DQ7 - DQ0 at  
Last Loaded Address  
Notes:  
1. When Sector Address is specified, any address in  
the selected sector is acceptable. However, when  
loading Write-Buffer address locations with data, all  
addresses must fall within the selected Write-Buffer  
Page.  
Yes  
DQ7 = Data?  
No  
2. DQ7 may change simultaneously with DQ5.  
Therefore, DQ7 should be verified.  
No  
3. If this flowchart location was reached because  
DQ5= “1”, then the device FAILED. If this flowchart  
location was reached because DQ1= “1”, then the  
Write to Buffer operation was ABORTED. In either  
case, the proper reset command must be written  
before the device can begin another operation. If  
DQ1=1, write the Write-Buffer-Programming-  
Abort-Reset command. if DQ5=1, write the Reset  
command.  
No  
DQ1 = 1?  
DQ5 = 1?  
Yes  
Yes  
Read DQ7 - DQ0 with  
address = Last Loaded  
Address  
4. See Table 31 and Table 32 for command  
sequences required for write buffer programming.  
Yes  
(Note 2)  
DQ7 = Data?  
No  
FAIL or ABORT  
PASS  
(Note 3)  
Figure 3. Write Buffer Programming Operation  
April 30, 2004 S29GLxxxM_00A5  
S29GLxxxM MirrorBitTM Flash Family  
107