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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
data pairs must fall within the selected-write-buffer-page. The system then  
writes the remaining address/data pairs into the write buffer. Write buffer loca-  
tions may be loaded in any order.  
The write-buffer-page address must be the same for all address/data pairs loaded  
into the write buffer. (This means Write Buffer Programming cannot be performed  
across multiple write-buffer pages.) This also means that Write Buffer Program-  
ming cannot be performed across multiple sectors. If the system attempts to load  
programming data outside of the selected write-buffer page, the operation will  
abort.  
Note that if a Write Buffer address location is loaded multiple times, the address/  
data pair counter will be decremented for every data load operation. The host  
system must therefore account for loading a write-buffer location more than  
once. The counter decrements for each data load operation, not for each unique  
write-buffer-address location. Note also that if an address location is loaded more  
than once into the buffer, the final data loaded for that address will be  
programmed.  
Once the specified number of write buffer locations have been loaded, the system  
must then write the Program Buffer to Flash command at the sector address. Any  
other address and data combination aborts the Write Buffer Programming oper-  
ation. The device then begins programming. Data polling should be used while  
monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5,  
and DQ1 should be monitored to determine the device status during Write Buffer  
Programming.  
The write-buffer programming operation can be suspended using the standard  
program suspend/resume commands. Upon successful completion of the Write  
Buffer Programming operation, the device is ready to execute the next command.  
The Write Buffer Programming Sequence can be aborted in the following ways:  
„ Load a value that is greater than the page buffer size during the Number of  
Locations to Program step.  
„ Write to an address in a sector different than the one specified during the  
Write-Buffer-Load command.  
„ Write an Address/Data pair to a different write-buffer-page than the one se-  
lected by the Starting Address during the write buffer data loading stage of  
the operation.  
„ Write data other than the Confirm Command after the specified number of  
data load cycles.  
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address  
location loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset com-  
mand sequence must be written to reset the device for the next operation.  
Note that the SecSi Sector, autoselect, and CFI functions are unavailable when a  
program operation is in progress.This flash device is capable of handling multiple  
write buffer programming operations on the same write buffer address range  
without intervening erases. For applications requiring incremental bit program-  
ming, a modified programming method is required; please contact your local  
Spansion representative. Any bit in a write buffer address range cannot be  
programmed from “0” back to a “1.” Attempting to do so may cause the de-  
vice to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate the operation  
was successful. However, a succeeding read will show that the data is still “0.”  
Only erase operations can convert a “0” to a “1.”  
April 30, 2004 S29GLxxxM_00A5  
S29GLxxxM MirrorBitTM Flash Family  
105  
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