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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
After the Program Resume command is written, the device reverts to program-  
ming. The system can determine the status of the program operation using the  
DQ7 or DQ6 status bits, just as in the standard program operation. See Write Op-  
eration Status for more information.  
The system must write the Program Resume command (address bits are don’t  
care) to exit the Program Suspend mode and continue the programming opera-  
tion. Further writes of the Resume command are ignored. Another Program  
Suspend command can be written after the device has resumed programming.  
Program Operation  
or Write-to-Buffer  
Sequence in Progress  
Write Program Suspend  
Command Sequence  
Write address/data  
XXXh/B0h  
Command is also valid for  
Erase-suspended-program  
operations  
Wait 15 µs  
Autoselect and SecSi Sector  
read operations are also allowed  
Read data as  
required  
Data cannot be read from erase- or  
program-suspended sectors  
Done  
No  
reading?  
Yes  
Write Program Resume  
Command Sequence  
Write address/data  
XXXh/30h  
Device reverts to  
operation prior to  
Program Suspend  
Figure 5. Program Suspend/Program Resume  
Chip Erase Command Sequence  
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-  
tiated by writing two unlock cycles, followed by a set-up command. Two  
additional unlock write cycles are then followed by the chip erase command,  
which in turn invokes the Embedded Erase algorithm. The device does not require  
the system to preprogram prior to erase. The Embedded Erase algorithm auto-  
matically preprograms and verifies the entire memory for an all zero data pattern  
prior to electrical erase. The system is not required to provide any controls or tim-  
ings during these operations. Table 31 and Table 32 show the address and data  
requirements for the chip erase command sequence.  
When the Embedded Erase algorithm is complete, the device returns to the read  
mode and addresses are no longer latched. The system can determine the status  
of the erase operation by using DQ7, DQ6, or DQ2. Refer to the Write Operation  
Status section for information on these status bits.  
April 30, 2004 S29GLxxxM_00A5  
S29GLxxxM MirrorBitTM Flash Family  
109