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S29GL256M10TAIR10 参数 Datasheet PDF下载

S29GL256M10TAIR10图片预览
型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
All addresses are latched on the falling edge of WE# or CE#, whichever happens  
later. All data is latched on the rising edge of WE# or CE#, whichever happens  
first. Refer to the AC Characteristics section for timing diagrams.  
Reading Array Data  
The device is automatically set to reading array data after device power-up. No  
commands are required to retrieve data. The device is ready to read array data  
after completing an Embedded Program or Embedded Erase algorithm.  
After the device accepts an Erase Suspend command, the device enters the  
erase-suspend-read mode, after which the system can read data from any non-  
erase-suspended sector. After completing a programming operation in the Erase  
Suspend mode, the system may once again read array data with the same ex-  
ception. See the Erase Suspend/Erase Resume Commands section for more  
information.  
The system must issue the reset command to return the device to the read (or  
erase-suspend-read) mode if DQ5 goes high during an active program or erase  
operation, or if the device is in the autoselect mode. See the next section, Reset  
Command, for more information.  
See also Requirements for Reading Array Data in the Device Bus Operations sec-  
tion for more information. The Read-Only Operations–“AC Characteristics”  
section on page 124 provides the read parameters, and Figure 13 shows the tim-  
ing diagram.  
Reset Command  
Writing the reset command resets the device to the read or erase-suspend-read  
mode. Address bits are don’t cares for this command.  
The reset command may be written between the sequence cycles in an erase  
command sequence before erasing begins. This resets the device to the read  
mode. Once erasure begins, however, the device ignores reset commands until  
the operation is complete.  
The reset command may be written between the sequence cycles in a program  
command sequence before programming begins. This resets the device to the  
read mode. If the program command sequence is written while the device is in  
the Erase Suspend mode, writing the reset command returns the device to the  
erase-suspend-read mode. Once programming begins, however, the device ig-  
nores reset commands until the operation is complete.  
The reset command may be written between the sequence cycles in an autoselect  
command sequence. Once in the autoselect mode, the reset command must be  
written to return to the read mode. If the device entered the autoselect mode  
while in the Erase Suspend mode, writing the reset command returns the device  
to the erase-suspend-read mode.  
If DQ5 goes high during a program or erase operation, writing the reset command  
returns the device to the read mode (or erase-suspend-read mode if the device  
was in Erase Suspend).  
Note that if DQ1 goes high during a Write Buffer Programming operation, the sys-  
tem must write the Write-to-Buffer-Abort Reset command sequence to reset the  
device for the next operation.  
102  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004  
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