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S29CD032G0JFAN012 参数 Datasheet PDF下载

S29CD032G0JFAN012图片预览
型号: S29CD032G0JFAN012
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2.5伏只突发模式下的双启动,同步读/写FLASH MEMORY [CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY]
分类和应用:
文件页数/大小: 93 页 / 1616 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
mand. The program address and data are written next, which in turn initiate the  
Embedded Program algorithm. The system is not required to provide further con-  
trols or timings. The device automatically generates the program pulses and  
verifies the programmed cell margin. Tables 19 and 20 show the address and  
data requirements for the program command sequence.  
During the Embedded Program algorithm, the system can determine the status  
of the program operation by using DQ7, DQ6, or RY/BY#. (See Write Operation  
Status for information on these status bits.) When the Embedded Program algo-  
rithm is complete, the device returns to reading array data and addresses are no  
longer latched. Note that an address change is required to begin read valid array  
data.  
Except for Program Suspend, any commands written to the device during the Em-  
bedded Program Algorithm are ignored. Note that a hardware reset  
immediately terminates the programming operation. The command sequence  
should be reinitiated once that bank has returned to reading array data, to ensure  
data integrity.  
Programming is allowed in any sequence and across sector boundaries. A bit  
cannot be programmed from a “0” back to a “1”. Attempting to do so may  
halt the operation and set DQ5 to “1,or cause the Data# Polling algorithm to  
indicate the operation was successful. However, a succeeding read will show that  
the data is still “0. Only erase operations can convert a “0” to a “1.  
Accelerated Program Command  
The Accelerated Chip Program mode is designed to improve the Word or Double  
Word programming speed. Improving the programming speed is accomplished by  
using the ACC pin to supply both the wordline voltage and the bitline current in-  
stead of using the V pump and drain pump, which is limited to 2.5 mA. Because  
PP  
the external ACC pin is capable of supplying significantly large amounts of current  
compared to the drain pump, all 32 bits are available for programming with a sin-  
gle programming pulse. This is an enormous improvement over the standard 5-  
bit programming. If the user is able to supply an external power supply and con-  
nect it to the ACC pin, significant time savings are realized.  
In order to enter the Accelerated Program mode, the ACC pin must first be taken  
to V  
(12 V ± 0.5 V) and followed by the one-cycle command with the program  
HH  
address and data to follow. The Accelerated Chip Program command is only exe-  
cuted when the device is in Unlock Bypass mode and during normal read/reset  
operating mode.  
In this mode, the write protection function is bypassed unless the PPB Lock Bit =  
1.  
The Accelerated Program command is not permitted if the SecSi sector is  
enabled.  
Unlock Bypass Command Sequence  
The unlock bypass feature allows the system to program words to the device  
faster than using the standard program command sequence. The unlock bypass  
command sequence is initiated by first writing two unlock cycles. This is followed  
by a third write cycle containing the unlock bypass command, 20h. The device  
then enters the unlock bypass mode. A two-cycle unlock bypass program com-  
mand sequence is all that is required to program in this mode. The first cycle in  
this sequence contains the unlock bypass program command, A0h; the second  
48  
S29CD032G  
30606B0 March 22, 2004  
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