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S29CD032G0JFAN012 参数 Datasheet PDF下载

S29CD032G0JFAN012图片预览
型号: S29CD032G0JFAN012
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2.5伏只突发模式下的双启动,同步读/写FLASH MEMORY [CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY]
分类和应用:
文件页数/大小: 93 页 / 1616 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
dow has expired. The status of the sector erase operation is determined three  
ways:  
„ Data# polling of the DQ7 pin  
„ Checking the status of the toggle bit DQ6  
„ Checking the status of the RY/BY# pin  
Further status of device activity during the sector erase operation is determined  
using toggle bit DQ2 (refer to DQ2: Toggle Bit II).  
When the Embedded Erase algorithm is complete, the device returns to reading  
array data, and addresses are no longer latched. Note that an address change is  
required to begin read valid array data.  
Figure 5 illustrates the Embedded™ Erase Algorithm, using a typical command  
sequence and bus operation. Refer to the Erase/Program Operations tables in the  
AC Characteristics section for parameters, and to Figures 21 and 22 for timing  
diagrams.  
START  
Write Erase  
Command Sequence  
Data Poll  
from System  
Embedded  
Erase  
algorithm  
in progress  
No  
Data = FFh?  
Yes  
Erasure Completed  
Notes:  
1. See Tables 19 and 20 for erase command sequence.  
2. See DQ3: Sector Erase Timer for more information.  
Figure 5. Erase Operation  
Sector Erase and Program Suspend Command  
The Sector Erase and Program Suspend command allows the user to interrupt a  
Sector Erase or Program operation and perform data read or programs in a sector  
that is not being erased or to the sector where a programming operation was ini-  
tiated. This command is applicable only during the Sector Erase and  
Programming operation, which includes the time-out period for Sector Erase.  
52  
S29CD032G  
30606B0 March 22, 2004  
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