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S29CD032G 参数 Datasheet PDF下载

S29CD032G图片预览
型号: S29CD032G
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2.5伏只突发模式下的双启动,同步读/写FLASH MEMORY [CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY]
分类和应用:
文件页数/大小: 93 页 / 1616 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
V
V
IH  
CE#  
CLK  
IL  
3 Clock Delay  
ADV#  
Addresses  
Data  
Address 1 Latched  
Address 1  
Address 2  
Invalid  
D1  
D2  
D3  
D0  
OE#  
IND/WAIT#  
Note: Operation is shown for the 32-bit data bus. Figure shown with 3-CLK initial access delay configuration, linear address, 4-  
doubleword burst, output on rising CLD edge, data hold for 1-CLK, IND/WAIT# asserted on the last transfer before wrap-around.  
Figure 2. End of Burst Indicator (IND/WAIT#) Timing for Linear 8-Word Burst Operation  
Burst Access Timing Control  
In addition to the IND/WAIT# signal control, burst controls exist in the Control  
Register for initial access delay, delivery of data on the CLK edge, and the length  
of time data is held.  
Initial Burst Access Delay Control  
The device contains options for initial access delay of a burst access. The initial  
access delay has no effect on asynchronous read operations.  
Burst Initial Access Delay is defined as the number of clock cycles that must  
elapse from the first valid clock edge after ADV# assertion (or the rising edge of  
ADV#) until the first valid CLK edge when the data is valid.  
The burst access is initiated and the address is latched on the first rising CLK edge  
when ADV# is active or upon a rising ADV# edge, whichever comes first. (Table  
8 describes the initial access delay configurations.)  
March 22, 2004 30606B0  
S29CD032G  
23  
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