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S29CD032G 参数 Datasheet PDF下载

S29CD032G图片预览
型号: S29CD032G
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2.5伏只突发模式下的双启动,同步读/写FLASH MEMORY [CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY]
分类和应用:
文件页数/大小: 93 页 / 1616 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
it is not tested by executing an embedded operation in the big (busy) bank while  
performing other operations in the small (non-busy) bank. Table 2.  
Table 2. Bank Assignment for Boot Bank  
Sector Devices  
Bank  
Bank 0  
Bank 1  
Ordering Option 00  
Small Bank  
Ordering Option 01  
Big Bank  
Big Bank  
Small Bank  
Also Table 18. ”Allowed Operations During Erase/Program Suspend. Also  
Table 12. ”Sector Addresses for Ordering Option 00 and Table 13. ”Sector Ad-  
dresses for Ordering Option 01.  
Simultaneous Read/Write Operations With Zero Latency  
The device is capable of reading data from one bank of memory while program-  
ming or erasing in the other bank of memory. An erase operation may also be  
suspended to read from or program to another location within the same bank (ex-  
cept the sector being erased). Refer to the DC Characteristics table for read-  
while-program and read-while-erase current specifications.  
Simultaneous read/write operations are valid for both the main Flash memory  
array and the SecSi OTP sector. Simultaneous Read/Write is disabled during the  
CFI and Password Program/Verify operations. PPB Program/Erase operations and  
the Password Unlock operation permit reading data from the large (75%) bank  
while reading the operation status of these commands from the small (25%)  
bank.  
Table 3. Ordering Option 00  
Bank  
Bank 0  
Bank 1  
A19:A18  
00  
01, 1X  
Table 4. Ordering Option 01  
Bank  
A19  
Bank 0  
Bank 1  
0X, 10  
11  
Writing Commands/Command Sequences  
To write a command or command sequence (which includes programming data  
to the device and erasing sectors of memory), the system must drive WE# and  
CE# to V , and OE# to V .  
IL  
IH  
The device features an Unlock Bypass mode to facilitate faster programming.  
Once the device enters the Unlock Bypass mode, only two write cycles are re-  
quired to program a word or byte, instead of four. The Sector Erase and Program  
Suspend Command section has details on programming data to the device using  
both standard and Unlock Bypass command sequences.  
An erase operation can erase one sector, multiple sectors, or the entire device.  
Tables 12 and 13 indicate the address space that each sector occupies. A “sector  
address” consists of the address bits required to uniquely select a sector. The  
16  
S29CD032G  
30606B0 March 22, 2004  
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