Si1000/1/2/3/4/5
Table 4.10. Temperature Sensor Electrical Characteristics
V
= 1.8 to 3.6V V, –40 to +85 °C unless otherwise specified.
DD
Parameter
Conditions
Min
Typ
Max
Units
Linearity
Slope
—
—
—
—
—
—
±1
3.40
40
—
—
—
—
—
°C
mV/°C
µV/°C
mV
1
1
Slope Error
Offset
Temp = 25 °C
Temp = 25 °C
1025
18
Offset Error
mV
Temperature Sensor Settling
Initial Voltage=0 V
Initial Voltage=3.6 V
—
3.0
6.5
µs
2
Time
Supply Current
—
35
—
µA
Notes:
1. Represents one standard deviation from the mean.
2. The temperature sensor settling time, resulting from an ADC mux change or enabling of the temperature
sensor, varies with the voltage of the previously sampled channel and can be up to 6.5 µs if the previously
sampled channel voltage was greater than 3 V. To minimize the temperature sensor settling time, the ADC
mux can be momentarily set to ground before being set to the temperature sensor output. This ensures that
the temperature sensor output will settle in 3 µs or less.
Table 4.11. Voltage Reference Electrical Characteristics
V
= 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
DD
Parameter
Conditions
Min
Typ
Max
Units
Internal High-Speed Reference (REFSL[1:0] = 11)
–40 to +85 °C,
= 1.8–3.6 V
Output Voltage
1.60
1.65
1.70
V
V
DD
VREF Turn-on Time
Supply Current
—
—
—
1.7
—
µs
200
µA
Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)
–40 to +85 °C,
= 1.8–3.6 V
Output Voltage
1.645
1.680
1.715
V
V
DD
VREF Short-Circuit Current
Load Regulation
—
—
—
3.5
400
15
—
—
—
mA
µV/µA
ms
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic
bypass, settling to 0.5 LSB
0.1 µF ceramic bypass, settling to
0.5 LSB
VREF Turn-on Time 1
VREF Turn-on Time 2
—
300
—
µs
no bypass cap, settling to 0.5 LSB
VREF Turn-on Time 3
Supply Current
—
—
25
15
—
—
µs
µA
External Reference (REFSL[1:0] = 00, REFOE = 0)
Input Voltage Range
0
—
V
V
DD
Sample Rate = 300 ksps; VREF =
3.0 V
Input Current
—
5.25
—
µA
Rev. 1.0
61
SILICON [ SILICON ]
