Si1000/1/2/3/4/5
Table 4.12. IREF0 Electrical Characteristics
V
= 1.8 to 3.6 V, –40 to +85 °C, unless otherwise specified.
DD
Parameter
Conditions
Min
Typ
Max
Units
Static Performance
Resolution
6
—
bits
V
Output Compliance Range
Low Power Mode, Source
High Current Mode, Source
Low Power Mode, Sink
0
0
V
– 0.4
DD
—
V
– 0.8
V
DD
0.3
0.8
—
—
—
—
—
—
—
—
—
V
V
DD
DD
High Current Mode, Sink
—
V
V
Integral Nonlinearity
Differential Nonlinearity
Offset Error
<±0.2
<±0.2
<±0.1
—
±1.0
LSB
LSB
LSB
%
±1.0
±0.5
±5
Full Scale Error*
Low Power Mode, Source
High Current Mode, Source
Low Power Mode, Sink
—
±6
%
—
±8
%
High Current Mode, Sink
—
±8
%
Absolute Current Error
Low Power Mode
Sourcing 20 µA
<±1
±3
%
Dynamic Performance
Output Settling Time to 1/2 LSB
Startup Time
—
—
300
1
—
—
ns
µs
Power Consumption
Net Power Supply Current
Low Power Mode, Source
IREF0DAT = 000001
IREF0DAT = 111111
(V supplied to IREF0 minus
DD
—
—
10
10
—
—
µA
µA
any output source current)
High Current Mode, Source
IREF0DAT = 000001
IREF0DAT = 111111
—
—
10
10
—
—
µA
µA
Low Power Mode, Sink
IREF0DAT = 000001
IREF0DAT = 111111
—
—
1
—
—
µA
µA
11
High Current Mode, Sink
IREF0DAT = 000001
IREF0DAT = 111111
—
—
12
81
—
—
µA
µA
*Note: Full scale is 63 µA in low power mode and 504 µA in high power mode.
62
Rev. 1.0
SILICON [ SILICON ]
